Physical Review B

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed Antiferromagnetic spintronics started out with studies on spin transfer, and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics Central to these endeavors are the need for predictive models, relevant disruptive materials and new experimental designs This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials It also details some of the remaining bottlenecks and suggests possible avenues for future research

Antiferromagnetic spintronics

Charge separation is crucial for increasing the activity of semiconductor-based photocatalysts, especially in water splitting reactions. Here we show, using monoclinic bismuth vanadate crystal as a model photocatalyst, that efficient charge separation can be achieved on different crystal facets, as evidenced by the reduction reaction with photogenerated electrons and oxidation reaction with photogenerated holes, which take place separately on the {010} and {110} facets under photo-irradiation. Based on this finding, the reduction and oxidation cocatalysts are selectively deposited on the {010} and {110} facets respectively, resulting in much higher activity in both photocatalytic and photoelectrocatalytic water oxidation reactions, compared with the photocatalyst with randomly distributed cocatalysts. These results show that the photogenrated electrons and holes can be separated between the different facets of semiconductor crystals. This finding may be useful in semiconductor physics and chemistry to construct highly efficient solar energy conversion systems.

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Spatial separation of photogenerated electrons and holes among {010} and {110} crystal facets of BiVO4

Visible-light photocatalysis has evolved over the last decade into a widely used method in organic synthesis. Photocatalytic variants have been reported for many important transformations, such as cross-coupling reactions, α-amino functionalizations, cycloadditions, ATRA reactions, or fluorinations. To help chemists select photocatalytic methods for their synthesis, we compare in this Review classical and photocatalytic procedures for selected classes of reactions and highlight their advantages and limitations. In many cases, the photocatalytic reactions proceed under milder reaction conditions, typically at room temperature, and stoichiometric reagents are replaced by simple oxidants or reductants, such as air, oxygen, or amines. Does visible-light photocatalysis make a difference in organic synthesis? The prospect of shuttling electrons back and forth to substrates and intermediates or to selectively transfer energy through a visible-light-absorbing photocatalyst holds the promise to improve current procedures in radical chemistry and to open up new avenues by accessing reactive species hitherto unknown, especially by merging photocatalysis with organo- or metal catalysis.

Visible-Light Photocatalysis: Does It Make a Difference in Organic Synthesis?

The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic materials has driven significant research activity, with the goal of realizing their transformative technological potential. Here, we review progress in the fundamental understanding and design of new multiferroic materials, advances in characterization and modelling tools to describe them, and the exploration of devices and applications. Focusing on the translation of the many scientific breakthroughs into technological innovations, we identify the key open questions in the field where targeted research activities could have maximum impact in transitioning scientific discoveries into real applications. Magnetoelectric multiferroics, where magnetic properties are manipulated by electric field and vice versa, could lead to improved electronic devices. Here, advances in materials, characterisation and modelling, and usage in applications are reviewed.

Advances in magnetoelectric multiferroics.

Topotactic transition is a structural phase change in a matrix crystal lattice mediated by the ordered loss/gain and rearrangement of atoms, leading to unusual coordination environments and metal atoms with rare valent states. As early as in 1990s, low temperature hydride reduction was utilized to realize the topotactic transition. Since then, topological transformations have been developed via multiple approaches. Especially, the recent discovery of the Ni-based superconductivity in infinite-layer nickelates has greatly boosted the topotactic transition mean to synthesizing new oxides for exploring exotic functional properties. In this review, we have provided a detailed and generalized introduction to oxygen-related topotactic transition. The main body of our review include four parts: the structure-facilitated effects, the mechanism of the topotactic transition, some examples of topotactic transition methods adopted in different metal oxides (V, Mn, Fe, Co, Ni) and the related applications. This work is to provide timely and thorough strategies to successfully realize topotactic transitions for researchers who are eager to create new oxide phases or new oxide materials with desired functions.

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Topotactic Transition: A Promising Opportunity for Creating New Oxides

The coupling of optical and spintronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO3 upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the observation of room-temperature ferromagnetism in BaSnO3 thin films and the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO3 via oxygen vacancy creation, which exhibits a high carrier density of ~7.72*10^14 /cm2 and a high room-temperature mobility of ~18 cm2/V/s. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of 350% (more than 540 kOhm/Square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.

Room-Temperature Ferromagnetism and Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in BaSnO3

Our world is composed of various materials with different structures, where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology. Apart from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetically coupled materials, noncollinear spintronic materials have emerged as hot spots of research attention owing to exotic physical phenomena. In this Review, we firstly introduce two types noncollinear spin structures, i.e., the chiral spin structure that yields real-space Berry phases and the coplanar noncollinear spin structure that could generate momentum-space Berry phases, and then move to relevant novel physical phenomena including topological Hall effect, anomalous Hall effect, multiferroic, Weyl fermions, spin-polarized current, and spin Hall effect without spin-orbit coupling in these noncollinear spin systems. Afterwards, we summarize and elaborate the electric-field control of the noncollinear spin structure and related physical effects, which could enable ultralow power spintronic devices in future. In the final outlook part, we emphasize the importance and possible routes for experimentally detecting the intriguing theoretically predicted spin-polarized current, verifying the spin Hall effect in the absence of spin-orbit coupling and exploring the anisotropic magnetoresistance and domain-wall-related magnetoresistance effects for noncollinear antiferromagnetic materials.

Zhiqi Liu

Papers

Topotactic Transition: A Promising Opportunity for Creating New Oxides

Room-Temperature Ferromagnetism and Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in BaSnO3

Noncollinear Spintronics and Electric-Field Control: A Review