https://ralphgroup.lassp.cornell.edu/papers/JMMM-320-1190-2008.pdf

Spin transfer torques

The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕Co20Fe60B20∕Ta pseudo-spin-valve magnetic tunnel junction annealed at 525°C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500°C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeB∕MgO interface. X-ray diffraction measurement of MgO on SiO2 or Co20Fe60B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450°C. The highest TMR ratio observed at 5K was 1144%.

/pdf/tunnel-magnetoresistance-of-604-at-300k-by-suppression-of-ta-2yiy65l5s3.pdf

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with both the amplitude and frequency of any periodic “sine-wave-like” input voltage source, or current source. In particular, the pinched hysteresis loop shrinks and tends to a straight line as frequency increases. Though numerous examples of voltage vs. current pinched hysteresis loops have been published in many unrelated fields, such as biology, chemistry, physics, etc., and observed from many unrelated phenomena, such as gas discharge arcs, mercury lamps, power conversion devices, earthquake conductance variations, etc., we restrict our examples in this tutorial to solid-state and/or nano devices where copious examples of published pinched hysteresis loops abound. In particular, we sampled arbitrarily, one example from each year between the years 2000 and 2010, to demonstrate that the memristor is a device that does not depend on any particular material, or physical mechanism. For example, we have shown that spin-transfer magnetic tunnel junctions are examples of memristors. We have also demonstrated that both bipolar and unipolar resistance switching devices are memristors.

https://link.springer.com/content/pdf/10.1007%2Fs00339-011-6264-9.pdf

Resistance Switching Memories Are Memristors

Resistance Switching Memories are Memristors.

The magnetization of a magnetic material can be reversed by using electric currents that transport spin angular momentum. In the reciprocal process a changing magnetization orientation produces currents that transport spin angular momentum. Understanding how these processes occur reveals the intricate connection between magnetization and spin transport, and can transform technologies that generate, store or process information via the magnetization direction. Here we explain how currents can generate torques that affect the magnetic orientation and the reciprocal effect in a wide variety of magnetic materials and structures. We also discuss recent state-of-the-art demonstrations of current-induced torque devices that show great promise for enhancing the functionality of semiconductor devices.

https://physics.nyu.edu/kentlab/Papers/2012/NatureMaterials_11_372_2012.pdf

Current-induced torques in magnetic materials

We present experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions. The experiments show that, for MgO-based magnetic tunnelling junctions, the tunnelling magnetoresistance ratio is as large as 155% and the intrinsic switching current density is as low as 1.1 ? 106?A?cm?2. The thermal effect and current pulse width on spin-transfer magnetization switching are explored based on the analytical and numerical calculations. Three distinct switching modes, thermal activation, dynamic reversal, and precessional process, are identified within the experimental parameter space. The switching current distribution, write error, and read disturb are discussed based on device design considerations. The challenges and requirements for the successful application of spin-transfer torque as the write scheme in random access memory are addressed.

https://iopscience.iop.org/article/10.1088/0953-8984/19/16/165209/pdf

Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory

Dual magnetic tunnel junction (MTJ) structures consisting of two MgO insulating barriers of different resistances, two pinned reference layers aligned antiparallel to one another, and a free layer embedded between the two insulating barriers have been developed. The electron transport and spin dependent resistances in the dual MTJ structures are accounted for by sequential tunneling with some spin-flip relaxation in the central electrode (the free layer). With a tunneling magnetoresistance ratio of 70%, a switching current density Jc (at 30ms) of 0.52MA∕cm2 is obtained, corresponding to an intrinsic value of Jc0 (at 1ns) of 1.0MA∕cm2. This value of Jc0 is 2–3 times smaller than that of a single MgO insulating barrier MTJ structure and results from improvements in the spin-transfer torque efficiency. The asymmetry between JcAP→P and JcP→AP is significantly improved, which widens the read-write margin for memory device design. In addition, the experimental results show that the switching current density can be further reduced when an external field is applied along the hard axis of the free layer.

Spin transfer switching in dual MgO magnetic tunnel junctions

We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs) with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2–3×106A∕cm2. The switching data are compared to those obtained on similar MTJ nanostructures with AlOx barrier. It is observed that the switching current density for MgO based MTJs is 3 to 4 times smaller than that for AlOx based MTJs, and that can be attributed to higher tunneling spin polarization (TSP) in MgO based MTJs. In addition, we report a qualitative study of TSP for a set of samples, ranging from 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the TSP (at finite bias) responsible for the current-driven magnetization switching is suppressed as compared to zero-bias tunneling spin polarization determined from TMR.

Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

Spin transfer magnetic element having low saturation magnetization free layers

We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2-3 x 10 MA/cm2. The switching data are compared to those obtained on similar MTJ nanostructures with AlOx barrier. It is observed that the switching current density for MgO based MTJs is 3-4 times smaller than that for AlOx based MTJs, and that can be attributed to higher tunneling spin polarization (TSP) in MgO based MTJs. In addition, we report a qualitative study of TSP for a set of samples, ranging from 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the TSP (at finite bias) responsible for the current-driven magnetization switching is suppressed as compared to zero-bias tunneling spin polarization determined from TMR.

Zhitao Diao

Papers

Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory

Spin transfer switching in dual MgO magnetic tunnel junctions

Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers

Spin transfer magnetic element having low saturation magnetization free layers

Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers