Z
Zhiwei Chen
Researcher at Tongji University
Publications - 53
Citations - 6040
Zhiwei Chen is an academic researcher from Tongji University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 31, co-authored 53 publications receiving 4112 citations.
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Journal ArticleDOI
Lattice Dislocations Enhancing Thermoelectric PbTe in Addition to Band Convergence
Zhiwei Chen,Zhengzhong Jian,Wen Li,Yunjie Chang,Binghui Ge,Riley Hanus,Jiong Yang,Yue Chen,Mingxin Huang,Gerald Jeffrey Snyder,Yanzhong Pei +10 more
TL;DR: This work demonstrates the effectiveness of dense lattice dislocations as a means of lowering κL, but also the importance of engineering both thermal and electronic transport simultaneously when designing high-performance thermoelectrics.
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Low-Symmetry Rhombohedral GeTe Thermoelectrics
Juan Li,Xinyue Zhang,Zhiwei Chen,Siqi Lin,Wen Li,Jiahong Shen,Ian T. Witting,Alireza Faghaninia,Yue Chen,Anubhav Jain,Lidong Chen,G. Jeffrey Snyder,Yanzhong Pei +12 more
TL;DR: In this paper, the symmetry breaking of band degeneracy is demonstrated in rhombohedral GeTe alloys, having a slightly reduced symmetry from its cubic structure, to realize a record figure of merit (zT ∼ 2.4) at 600 K.
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Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics.
Zhiwei Chen,Binghui Ge,Wen Li,Siqi Lin,Jiawen Shen,Yunjie Chang,Riley Hanus,G. Jeffrey Snyder,Yanzhong Pei +8 more
TL;DR: The vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT.
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Tellurium as a high-performance elemental thermoelectric.
TL;DR: Here it is shown that a simple elemental semiconductor, tellurium, exhibits a high thermoelectric figure of merit of unity, not only demonstrating the concept but also filling up the high performance gap from 300 to 700 K for elemental thermoeLECTrics.
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Promoting SnTe as an Eco-Friendly Solution for p-PbTe Thermoelectric via Band Convergence and Interstitial Defects
Wen Li,Linglang Zheng,Binghui Ge,Siqi Lin,Xinyue Zhang,Zhiwei Chen,Yunjie Chang,Yanzhong Pei +7 more
TL;DR: A combination of band convergence and interstitial defects, each of which enables a ≈150% increase in the peak zT, successfully accumulates the zT enhancements to be ≈300% (zT up to 1.6) without involving any toxic elements.