S
Siqi Lin
Researcher at Tongji University
Publications - 60
Citations - 5043
Siqi Lin is an academic researcher from Tongji University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 29, co-authored 53 publications receiving 3381 citations.
Papers
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Journal ArticleDOI
Low-Symmetry Rhombohedral GeTe Thermoelectrics
Juan Li,Xinyue Zhang,Zhiwei Chen,Siqi Lin,Wen Li,Jiahong Shen,Ian T. Witting,Alireza Faghaninia,Yue Chen,Anubhav Jain,Lidong Chen,G. Jeffrey Snyder,Yanzhong Pei +12 more
TL;DR: In this paper, the symmetry breaking of band degeneracy is demonstrated in rhombohedral GeTe alloys, having a slightly reduced symmetry from its cubic structure, to realize a record figure of merit (zT ∼ 2.4) at 600 K.
Journal ArticleDOI
Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics.
Zhiwei Chen,Binghui Ge,Wen Li,Siqi Lin,Jiawen Shen,Yunjie Chang,Riley Hanus,G. Jeffrey Snyder,Yanzhong Pei +8 more
TL;DR: The vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT.
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Tellurium as a high-performance elemental thermoelectric.
TL;DR: Here it is shown that a simple elemental semiconductor, tellurium, exhibits a high thermoelectric figure of merit of unity, not only demonstrating the concept but also filling up the high performance gap from 300 to 700 K for elemental thermoeLECTrics.
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Promoting SnTe as an Eco-Friendly Solution for p-PbTe Thermoelectric via Band Convergence and Interstitial Defects
Wen Li,Linglang Zheng,Binghui Ge,Siqi Lin,Xinyue Zhang,Zhiwei Chen,Yunjie Chang,Yanzhong Pei +7 more
TL;DR: A combination of band convergence and interstitial defects, each of which enables a ≈150% increase in the peak zT, successfully accumulates the zT enhancements to be ≈300% (zT up to 1.6) without involving any toxic elements.
Journal ArticleDOI
Lattice strain advances thermoelectrics
Yixuan Wu,Zhiwei Chen,Pengfei Nan,Fen Xiong,Siqi Lin,Xinyue Zhang,Yue Chen,Lidong Chen,Binghui Ge,Binghui Ge,Yanzhong Pei +10 more
TL;DR: In this article, a strategy of alternatively manipulating the interaction force between atoms through lattice strains without changing the composition, for remarkably reducing the lattice thermal conductivity without reducing carrier mobility, in Na 0.03Eu0.03Sn0.92Te with stable lattice dislocations.