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Zhou Shangxiong

Researcher at South China University of Technology

Publications -  72
Citations -  269

Zhou Shangxiong is an academic researcher from South China University of Technology. The author has contributed to research in topics: Thin-film transistor & Thin film. The author has an hindex of 6, co-authored 72 publications receiving 165 citations.

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A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor

TL;DR: A simple solution method is presented towards enhanced performance of ZrO2 films by intentionally increasing the concentration of precursor by demonstrating the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and providing an approach to precisely control solution- Processed oxide films thickness.
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Morphology Modulation of Direct Inkjet Printing by Incorporating Polymers and Surfactants into a Sol-Gel Ink System.

TL;DR: A novel method of direct inkjet printing of a uniform metal oxide structure is reported by introducing a polymer polyacrylamide and a surfactant FSO into a sol-gel ink system, and the new ink system can gel from the printing pattern edge to center as temperature increases because of the cross-linking of the polymer chains.
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Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

TL;DR: In this article, the electrical properties of ZrO2 films prepared by various deposition methods and the main methods to improve their electrical properties are introduced, including doping of nonmetal elements, metal doping design of pseudo-binary alloy system, new stacking structure, coupling with organic materials and utilization of crystalline ZRO2 as well as optimization of low-temperature solution process.
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A Simple, Low Cost Ink System for Drop-on-Demand Printing High Performance Metal Oxide Dielectric Film at Low Temperature

TL;DR: An ink system containing inexpensive raw materials through a simple process and ZrO x dielectric film at a relatively low annealing temperature of 250 °C shows a temperature-induced gelation behavior, and a gel network is formed when the temperature rises.