Z
Zhouchangwan Yu
Researcher at Stanford University
Publications - 5
Citations - 429
Zhouchangwan Yu is an academic researcher from Stanford University. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 2, co-authored 2 publications receiving 278 citations.
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Journal ArticleDOI
Electronic synapses made of layered two-dimensional materials
Yuanyuan Shi,Yuanyuan Shi,Xianhu Liang,Bin Yuan,Victoria Chen,Haitong Li,Fei Hui,Zhouchangwan Yu,Fang Yuan,Fang Yuan,Eric Pop,H.-S. Philip Wong,Mario Lanza +12 more
TL;DR: It is shown that multilayer hexagonal boron nitride (h-BN) can be used as a resistive switching medium to fabricate high-performance electronic synapses, enabling the emulation of a range of synaptic-like behaviour, including both short- and long-term plasticity.
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Potassium Hydroxide Mixed with Lithium Hydroxide: An Advanced Electrolyte for Oxygen Evolution Reaction
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Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys.
Zhouchangwan Yu,Balreen Saini,Yunzhi Liu,F. Huang,Apurva Mehta,John David Baniecki,H.-S. Philip Wong,Wilman Tsai,P. McIntyre +8 more
TL;DR: In this article , the effects of atomic layer deposition (ALD) temperature on the ferroelectricity of post-deposition-annealed Hf0.5Zr 0.5O2 (HZO) thin films are systematically studied.
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Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors
Balreen Saini,F. Huang,Joon Young Choi,Zhouchangwan Yu,Vivek Thampy,John David Baniecki,Wilman Tsai,P. McIntyre +7 more
TL;DR: In this paper , the authors investigated the wake-up effect in HfO2-based ferroelectrics using non-destructive methods that probe statistically significant sample volumes, and concluded that the wakeup is caused by a field-driven phase transformation of the tetragonal phase to the metastable ferroelectric orthorhombic phase during polarization switching of HZO capacitors.
Journal ArticleDOI
Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors
F. Huang,Matthias Passlack,S. L. Liew,Zhouchangwan Yu,Qing Lin,Aein S. Babadi,Vincent D.-H. Hou,P. McIntyre,S. Simon Wong +8 more
TL;DR: In this paper , the ferroelectric properties of individual TiN/Hf/Zr capacitors have been measured for technologically relevant areas as small as 60 nm using direct detection of ultralow charge.