Victoria Chen

TL;DR: It is shown that multilayer hexagonal boron nitride (h-BN) can be used as a resistive switching medium to fabricate high-performance electronic synapses, enabling the emulation of a range of synaptic-like behaviour, including both short- and long-term plasticity.

TL;DR: These thermal metamaterials are an example in the emerging field of phononics and could find applications where ultrathin thermal insulation is desired, in thermal energy harvesting, or for routing heat in ultracompact geometries.

TL;DR: In this paper, the authors report flexible nanoscale FETs based on 2D semiconductors; these are fabricated by transferring chemical-vapour-deposited transition metal dichalcogenides from rigid growth substrates together with nano-patterned metal contacts, using a polyimide film, which becomes the flexible substrate after release.

TL;DR: In this paper, the authors demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 uA/um at 1 V drain-to-source voltage).

TL;DR: Unipolar n-type MoTe2 transistors with the highest performance to date are demonstrated, including high saturation current and relatively low contact resistance and high resolution X-ray photoelectron spectroscopy reveals that interfacial metal-Te compounds dominate the contact resistance.