ANADIGICS

About: ANADIGICS is a based out in . It is known for research contribution in the topics: Amplifier & Direct-coupled amplifier. The organization has 230 authors who have published 167 publications receiving 2629 citations.

Exact analytical solution for current flow through diode with series resistance

Abstract: A simple analytical expression is presented for the current flow in a diode driven by a voltage source through a series resistance. The proposed solution is based on the Lambert W-function. The new expression leads to an efficient method for extracting series resistance from measured current-voltage data. Experimental results are presented which validate the proposed solution and extraction method.

Multiple-band amplifier

Abstract: A GaAs MMIC dual-band amplifier for wireless communications is disclosed for operation at either the 800 MHz or the 1900 MHz band and it provides desired gain and input and output impedance. Switching impedance networks are used at the input and output of the amplifier to provide matching input impedance and desired output impedance for operation in the two bands. Switching impedance networks are also used between any successive stages of the amplifier to provide proper interstage impedance. The dual band amplifier includes a bias control circuit which biases the amplifier to operate in A, B, AB or C mode. The amplifier can be used for the AMPS 800 or the GSM 900 operation or any other cellular operation such as the PCS 1900 and the it can be switched between the two operations by simply applying a proper control signal to the amplifier.

Low bias current/temperature compensation current mirror for linear power amplifier

Abstract: A power amplifier circuit whose performance is optimized by operating its stages in substantially close to a Class B mode by reducing quiescent current during low driver signal levels As the driver signal amplitude increases, the operation of the amplifier is configured to dynamically adjust to be in a Class AB mode, thereby increasing the power efficiency of the overall circuit at kiw drive levels A further enhancement to the power amplifier circuit includes a temperature compensation circuit to adjust the bias of the amplifier so as to stabilize the performance in a wide temperature range

Wafer demount receptacle for separation of thinned wafer from mounting carrier

Abstract: A wafer demounting receptacle comprises a substantially circular plate member and an upstanding rim structure provided around a periphery of the plate member. The rim structure is stepped and includes a first step defining a first diameter, and a second step defining a second diameter grater than the first diameter. The riser of the first step has a very low height so that a gap between the plate member and a fragile semiconductor wafer bonded to a carrier having a peripheral abutment surface resting on the run of the first step, limits the bending of an edge portion of the wafer in a direction towards the plate member while the wafer is partially demounted from a wafer carrier. The plate member is further provided with a pattern of holes that generates eddy currents in a solvent that flows over the wafer, carrier, and receptacle so as to soften and dissolve the mounting adhesive between the wafer and carrier such that the wafer is separated from the carrier. The wafer demount receptacle can be used in conjunction with a wafer demount tool comprising a chamber defined between a backing plate and a contact plate. The chamber is provided with a gas inlet for introducing a pressurized gas, while the contact plate is provided with a plurality of through-holes. The wafer demount tool is mated to the wafer demount receptacle such that the contact plate is juxtaposed against the back side of a wafer carrier resting in the wafer demount receptacle. Pressurized gas flowing through the wafer demount tool displaces solvent from the wafer-carrier interface to further promote separation of the wafer from the carrier.

Linearity radio frequency switch with low control voltage

Abstract: A field effect transistor used in radio frequency switching applications and having a linear performance characteristic is disclosed. The transistor comprises a plurality of gate lines, a source terminal, a drain terminal, and two feed forward capacitors electrically coupled to the source and drain terminals and the gate line at a plurality of points along the line. An improved transistor preferably includes three or more gate lines to help improve harmonic suppression.