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Institution

Kyonggi University

EducationSuwon, South Korea
About: Kyonggi University is a education organization based out in Suwon, South Korea. It is known for research contribution in the topics: Catalysis & Dielectric. The organization has 1946 authors who have published 4404 publications receiving 64791 citations.


Papers
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Journal ArticleDOI
01 Mar 2019-Fuel
TL;DR: In this paper, the performance and emission characteristics of rice bran oil derived biodiesel blends during fueling a four-stroke, single-cylinder, direct-injection engine at 1500 rpm were investigated.

39 citations

Journal ArticleDOI
TL;DR: A new one-parameter fourth-order family of iterative methods for solving nonlinear equations that requires two evaluations of the given function and one of its first derivative per iteration is presented.

39 citations

Journal ArticleDOI
TL;DR: In this article, a nanocapsule (NC)-gelatin suspension was freeze-dried to produce a sample of dry food, which was rehydrated and the dispersibility of the nocapsules was investigated.

39 citations

Journal ArticleDOI
TL;DR: In this article, a wall-climbing platform equipped with new modularized wall-cleaning units is presented, where two propeller thrusters are optimally designed by the Taguchi method to keep in good contact with various types of walls.

39 citations

Journal ArticleDOI
Abstract: The energy band gaps and the density of states (DOS) of the quaternary alloy semiconductor ${\mathrm{In}}_{1\ensuremath{-}x}{\mathrm{Ga}}_{x}{\mathrm{As}}_{1\ensuremath{-}y}{\mathrm{P}}_{y}$ lattice matched on InP and GaAs are calculated and analyzed by using the universal tight-binding (UTB) method based on a modified pseudocell (MPC). Good agreement was obtained between the calculated values and the experimental data for the lattice-matched alloy to InP, and a new band gap trend was observed for the lattice-matched alloy to GaAs. In addition, the entire composition variations of the \ensuremath{\Gamma}, $L,$ and $X$ band gaps for the ${\mathrm{In}}_{1\ensuremath{-}x}{\mathrm{Ga}}_{x}{\mathrm{As}}_{1\ensuremath{-}y}{\mathrm{P}}_{y}$ alloy are obtained. The calculations suggest that the alloy ${\mathrm{In}}_{1\ensuremath{-}x}{\mathrm{Ga}}_{x}{\mathrm{As}}_{1\ensuremath{-}y}{\mathrm{P}}_{y}$ in the low composition range of $(x,y)$ and lattice matched to InP can be used for efficient light emitting devices, but not for lattice matching to GaAs. The origin of band bowing is interpretated as the atomic orbital interactions through the bond alternation. The anion mixing affects on the shift of the DOS peak position and the cation mixing plays a dominant role on the change of the DOS peak intensity in the conduction band. The theoretical model is generic and applicable to various quaternary alloy systems.

39 citations


Authors

Showing all 1964 results

NameH-indexPapersCitations
Huu Hao Ngo7562424545
Jaejung Ko482148615
Sang-Ho Lee393544991
Hoon Kim376056010
Soon-Gil Yoon363934887
Dinh Duc Nguyen352324313
Soon Woong Chang351644004
Dukjoon Kim352425133
Kun Chang Lee342435077
Ashraf F. Ashour331573745
Hyejin Lee311542894
Kyung-Yong Chung312373089
Eung Soo Kim311913053
Choongwan Koo31982650
Do-Hee Kim301252559
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202311
202235
2021388
2020375
2019341
2018264