Watkins-Johnson Company

About: Watkins-Johnson Company is a based out in . It is known for research contribution in the topics: Amplifier & Diode. The organization has 174 authors who have published 146 publications receiving 3199 citations.

Chemical vapor deposition reactor and method of operation

Abstract: A chemical vapor deposition (CVD) reactor and method are disclosed wherein a chamber, preferably configured for receiving a single wafer as a deposition substrate, has multiple gas inlet orifices and exhaust ports which are independently adjustable for dynamically varying and controlling directionality of local gas flow vectors toward and past the deposition substrate. The injection angle of reactant gas being introduced into the chamber is adjusted by baffles for statically deflecting gas flow entering the chamber. Adjustment of the gas inlet orifices and/or exhaust ports and adjustment of the injection angle for the reactant gas is selected for achieving enhanced coating uniformity, and conformality of deposition if necessary or desired, on the substrate.

Gas injection system for semiconductor processing

Abstract: A system (10) for injecting a gaseous substance into a semiconductor processing chamber (12). The injection system (10) includes at least one plenum (42) formed in a plenum body (52) and a plurality of nozzles (34) associated with each plenum (42) for injecting gaseous substances from the plenums (42) into the chamber (12). A conduit structure (48) transports gaseous substances along an indirect path from the plenum (42) to the nozzles (34). The nozzles (34) are positioned and configured to provide a uniform distribution of gaseous substances across the wafer (22) surface.

Distributed microcellular communications system

Abstract: A distributed microcellular communication system comprised of a plurality of subcells arranged within one or more conventional cells. The distributed microcellular communications system includes one or more remote site stations, each of which transmits and receives information signals over an assigned set of communications channels within an associated subcell. Each remote site station includes a wideband RF receiver network within which information signals received from mobile units are converted into reverse link digital information signals. Also disposed within each remote site station is a remote communications link transceiver for transmitting the reverse link digital information signals over a communications link to the central base station, as well as for receiving forward link digital information signals from the central base station. The central base station includes a central communications link transceiver for receiving the reverse link digital information signals delivered over the communications link, as well as for transmitting the forward link digital information signals. The central base station is disposed to process the call information inherent within the forward and reverse link digital information signals in the manner required by standard cellular protocols. In an alternate implementation the remote site station further includes a channelizer for selecting a set of the reverse link digital information signals corresponding to the assigned set of communications channels, and may also include a bank of demodulator for demodulating the set of reverse link digital information signals.

Atmospheric pressure chemical vapor deposition apparatus

Abstract: A conveyorized atmospheric pressure chemical vapor deposition apparatus having a heated muffle and a conveyor belt for conveying objects to be coated through said muffle At least one chemical vapor deposition zone is provided in the muffle An injector assembly is also provided for uniformly injecting first and second reactant gases in the deposition zone across the width of the conveyor belt and against the surfaces of the objects to be coated The gases exit from slots connected to distribution plenums Polished cooled surfaces are used on the injector assembly to minimize deposition of chemicals thereon

The Matched Feedback Amplifier: Ultrawide-Band Microwave Amplification with GaAs MESFET's

Abstract: An ultrawide-band amplifier module has been developed that covers the frequency range from 350 MHz to 14 GHz. A minimum gain of 4 dB was obtained across this 40:1 bandwidth at an output power of 13 dBm. The amplifier makes use of negative and positive feedback and incorporates a GaAs MESFET that was developed with special emphasis on low parasitics. The transistor has the gate dimensions 800 by 1 mu m. The technology and RF performance of the GaAs MESFET are discussed, as are the design considerations and performance of the single-ended feed-back amplifier module.