scispace - formally typeset
Search or ask a question

Showing papers in "Journal of Crystal Growth in 1970"


Journal ArticleDOI
TL;DR: In this article, the metastable zone-widths of 25 different systems and their dependence on the cooling rate, the temperature and the presence or absence of crystals are reported and the results are discussed.

193 citations


Journal ArticleDOI
TL;DR: In this paper, the authors studied the crystallization of calcium sulfate dihydrate on the addition of seed crystals to stable supersaturated solutions at various temperatures between 15 and 45 °C.

176 citations


Journal ArticleDOI
Henry T. Minden1
TL;DR: In this paper, the diffusion equation was solved for the epitaxial crystallization of gallium arsenide from gallium solution, and the minimum temperature gradient allowed to avoid constitutional supercooling was calculated for the cases of a semi-infinite and a finite melt.

85 citations


Journal ArticleDOI
TL;DR: In this paper, the scale and shape of the interfaces of cellular or dendritic interfaces were investigated and it was suggested that the interfaces adjust their shape in such a way as to eliminate any constitutional supercooling.

77 citations


Journal ArticleDOI
TL;DR: In this paper, it was shown that the radius of a facet (b) is related to the radius (R) of the growth interface by b 2 = 2 ϵTR / G, where G is the temperature gradient in the solid and ϵT is the supercooling of the facet relative to the rest of the interface.

74 citations


Journal ArticleDOI
W.A. Bonner1, George J. Zydzik1
TL;DR: In this article, a large single lead molybdate useful for acousto-optic device applications was grown by pulling from the melt under conditions of low thermal gradient and using a growth direction ≈ 30δ off the c-axis crystals of high optical quality, as determined by the change in spot size of a helium-neon laser.

54 citations


Journal ArticleDOI
TL;DR: A modified flux technique using excess SbI 3 as the solvent was devised to circumvent the difficulty of growing SbSI needles in a large temperature gradient in a narrow extension of the growth vessel.

45 citations


Journal ArticleDOI
TL;DR: In this paper, the doping of epitaxial Si is analyzed assuming thermodynamic equilibrium, and the equilibrium partial pressures of various atomic aggregates of arsenic and phosphorus are calculated in the gas phase.

43 citations


Journal ArticleDOI
TL;DR: In this paper, transparent crystal plates 2 cm across, 0.3 mm in thickness, with resistivity similar to that of vapour grown ZnO, were obtained, from compositions corresponding to 2.84, 4.1 and 3.2 ZnOs.

37 citations


Journal ArticleDOI
TL;DR: In this article, a theoretical study of the vapour-phase growth of II-VI compounds in sealed tubes (Piper-Polich method) has been made by considering the whole growth process in three main steps: vaporization of the charge, transport of vaporized components and crystallisation from the vapours.

37 citations


Journal ArticleDOI
TL;DR: The susceptibility to cracking during the Czochralski growth of barium-sodium niobate is due to the lattice distortions associated with the ferroelectric transition as discussed by the authors.

Journal ArticleDOI
TL;DR: In this paper, the partial pressure dependence of doping level in the epitaxial layers of silicon is measured over a wide range of dopant partial pressures at low doping levels, solid solutions of boron and arsenic obey dilute solution theory.

Journal ArticleDOI
TL;DR: In this article, thin, smooth epitaxial layers of GaAs were generated in a matter of seconds by dipping a cooler substrate into a hotter solution, and, because the extent of growth is necessarily limited, reproducibility in layer thickness was achieved.

Journal ArticleDOI
TL;DR: In this article, a new type of boat was designed for liquid phase epitaxy, where the boat axis coincides with the axis of the tube furnace and rotation about this axis by 180° or 360° serves to bring the melt into contact with the substrates.

Journal ArticleDOI
TL;DR: In this article, the growth morphology of rare earth hydroxides is described, as well as the dependence of crystal size on various growth parameters and the heavier lanthanides show an unexplained different growth behavior than the lighter ones and work is continuing on this subject.

Journal ArticleDOI
TL;DR: In this article, the reciprocal cell spacings for both steady-state and transient conditions are approximately proportional to the breakdown velocities to the half power, and comparisons with theoretical predictions are made.

Journal ArticleDOI
TL;DR: In this article, the growth rates of these perturbations are in quantitative agreement with the predictions of a Mullins-Sekerka analysis of a cylinder growing into a binary melt.

Journal ArticleDOI
TL;DR: The Magneli phases (Ti n O 2 n −1 ) and Ti 3 O 5 can be grown from Na 2 B 4 O 7 -B 2 O 3 fluxes under equilibrium conditions if the oxygen fugacity of the coexisting vapor phase is controlled within narrow limits.

Journal ArticleDOI
T. Fukuda1, H. Hirano1, Shigenao Koide1
TL;DR: In this article, single crystals of K3Li2(TaxNb1−x)5O15 were grown over the entire composition range by the Kyropoulos technique.

Journal ArticleDOI
F.H. Wehmeier1
TL;DR: In this paper, a general scheme has been developed to evaluate the conditions under which a ternary phase may become unstable and decompose into the binary compounds, and the extension of the general scheme from ternaries to quarternary and higher compounds is proposed.

Journal ArticleDOI
R.E. Jesse1, H.F.J.I. Giller1
TL;DR: In this paper, the relation between cell size and growth velocity for unidirectionally grown cadmium-zinc alloys has been determined for a temperature gradient G = 16 degC/cm.

Journal ArticleDOI
TL;DR: In this article, it was shown that the dislocation density at the periphery depends only on the radial temperature gradient in the manner described by Billig, and that this mechanism of lattice misfit may also account for the whole distribution of dislocations in crystals grown under low (≈600 Torr) arsenic pressures.

Journal ArticleDOI
TL;DR: These nonvolatile flux systems combine the advantages of simpler fluxes without their disadvantages as discussed by the authors, and they protect the platinum crucible by oxidising traces of free lead or bismuth.

Journal ArticleDOI
TL;DR: In this paper, the dendrite growth of NH4C1 crystals from aqueous solutions was studied, and the linear growth velocity of the tip measured as function of supersaturation and temperature.

Journal ArticleDOI
TL;DR: In this paper, single crystals of TiB 2 were grown by the reaction between Ti and B in molten aluminum at 1450°C followed by slow cooling to room temperature, and they were used to construct a single crystal of TiTiB 2.

Journal ArticleDOI
TL;DR: In this article, single crystal layers of CdS have been grown on the three low index planes of GaAs and the growth rate decreased in the order (1 IIB), (110), (111 A), (100) substrate orientation and the orientations of S-face, (10 1 ¯ 3), (0001) Cd-face and (30 3 ¯ 4), respectively.

Journal ArticleDOI
B.G. Bagley1
TL;DR: In this paper, it was suggested that the growth of a low energy atomic configuration is an alternative to statistical faulting for the origin of pseudosymmetry, and that structures observed to have a single five-fold pseudo-ymmetric axis may have resulted from the continued growth of the low energy pentagonal dipyramid nucleus.

Journal ArticleDOI
TL;DR: In this paper, a quantitative disagreement between the experimental and theoretical concentration distribution calculated from Fick's law is due to other phenomena such as neglecting convection, which explains qualitatively the distribution of the concentrations of the solution around the crystal during its regular or dendritic growth.

Journal ArticleDOI
TL;DR: In this paper, the results of various methods of HgI2 single crystal growth are discussed and comparisons are made among the various methods and their effects on some other heavy metal iodides.

Journal ArticleDOI
TL;DR: In this article, an arrangement is described which provides programmed control of the heat balance at the interface of a Czochralski growth of a metal crystal, where the diameter of the crystal can be kept constant to ± 50 νm.