Bae Ho Park

TL;DR: In this paper, the authors show that lanthanum-substituted bismuth titanate (SBT) thin films provide a promising alternative for FRAM applications, since they are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650°C and their values of Pr are larger than those of the SBT films.

TL;DR: Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering methods in this paper, where the negative resistance and the switching mechanism could be described by electron conduction related to metallic nickel defect states existing in deep levels and by small polaron hole hopping conduction.

TL;DR: Through experiments on the negative resistance switching phenomenon in Pt-NiO-Pt structures, a nanofilament channels that can be electrically connected or disconnected are fabricated that are ideal for the basis for high-speed, high-density, nonvolatile memory applications.

TL;DR: This work reports the observation of domains on exfoliated monolayer graphene that differ by their friction characteristics, as measured by friction force microscopy, and proposes that the domains arise from ripple distortions that give rise to anisotropic friction in each domain as a result of the an isotropic puckering of the graphene.