Journal•ISSN: 1793-7140
Optics and Photonics Letters
World Scientific
About: Optics and Photonics Letters is an academic journal. The journal publishes majorly in the area(s): Optical switch & Quantum dot. It has an ISSN identifier of 1793-7140. Over the lifetime, 27 publications have been published receiving 146 citations.
Topics: Optical switch, Quantum dot, Logic gate, Adder, Dispersion (optics)
Papers
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TL;DR: In this paper, the authors describe the properties of a 1D anisotropic periodic structure, designed to have a band edge with fourth order degeneracy, called a degenerate band edge (DBE).
Abstract: We describe the properties of a 1D anisotropic periodic structure, designed to have a band edge with fourth order degeneracy, called a degenerate band edge (DBE). A giant field resonance at the transmission peak frequency closest to this band edge has been verified by rigorous numerical calculation and is supported by experimental evidence. Simulations are presented of the consequences of a χ3 nonlinear index change at a DBE resonant frequency which can provide all-optical switching and transmission self-limiting.
19 citations
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TL;DR: In this article, an increase in the effective fluorescence lifetime of Nd/Cr:YAG ceramics with temperature dependence was observed, which can be explained by spontaneous emissions occurring from the excited Nd ions and excitations of the nd ions from the lower level to the upper level at the same time.
Abstract: An increase in the effective fluorescence lifetime of Nd/Cr:YAG ceramics with temperature dependence was observed. The dependence on the doped Cr ion density for the increased effective fluorescence lifetime was also investigated. The effective lifetime of fluorescence in the ceramics increased from 1.1 to 1.8 ms owing to the phonon-assist cross-relaxation induced by the excited Cr ions, which is commonly observed in Tm:YAG or glass lasers. The increase in effective fluorescence lifetime can be explained by spontaneous emissions occurring from the excited Nd ions and excitations of the Nd ions from the lower level to the upper level at the same time. Additionally, an experiment for laser oscillations with the temperature of the laser material controlled was performed, and a remarkable increase of the output laser energy owing to cross-relaxation was observed when the temperature increased. The obtained maximum laser energy output was near twice that without cross-relaxation. The ceramics are considered promising lamp- or solar-pumped solid-laser materials owing to the efficient laser action based on this cross-relaxation.
16 citations
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TL;DR: In this paper, the integration of the perturbed nonlinear Schrodinger's equation with log law nonlinearity was carried out, and the solution is a closed form 1-soliton solution that is obtained by He's semi-inverse variational principle.
Abstract: This paper carries out the integration of the perturbed nonlinear Schrodinger's equation with log law nonlinearity. The solution is a closed form 1-soliton solution that is obtained by He's semi-inverse variational principle. The soliton amplitude and width are in terms of Lambert's function.
14 citations
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TL;DR: In this paper, a high operating temperature (HOT) middle wave infrared (MWIR) InAs/GaAs quantum dot infrared photodetector (QDIP) is reported.
Abstract: In this paper, a high operating temperature (HOT) middle wave infrared (MWIR) InAs/GaAs quantum dot (QD) infrared photodetector (QDIP) is reported. The QDIP covers a wide detection spectrum range from 3 μm to 6 μm. A large photoresponsivity of 6.4 A/W at a low bias voltage of 0.5 V and a high peak specific photodetectivity D* of 6.0 × 107cmHz1/2/W were obtained at a high operating temperature of 230 K.
13 citations
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TL;DR: In this article, a photoelectric device based on a lateral PIN photodiode gated by a transparent electrode (LPIN PD-GTE) fabricated on SOI film is proposed.
Abstract: A novel photoelectric device-Lateral PIN photodiode gated by a transparent electrode (LPIN PD-GTE) fabricated on SOI film is proposed. Its physical model is presented based on standard semiconductor equations. In this device, recombination of carriers is ignored due to its operation in depletion region and high electric field strength (E > 1 × 104V/m). Numerical calculation indicates that LPIN PD-GTE has high sensitivity and SNR (Signal to Noise Ratio). This model allows one to predict and optimize the photoelectric characteristics of LPIN PD-GTE.
13 citations