Showing papers in "Sensors and Actuators in 1984"

TL;DR: In this article, a simple equation has been developed from theoretical considerations which offers reasonably accurate quantitative predictions of surface acoustic wave (SAW) device frequency shifts when subjected to a given mass loading.

TL;DR: In this article, the response of electronicallyconducting oxides as pH sensors is demonstrated and several reaction mechanisms are proposed and discussed, but no interference from monovalent cations (Group IA) was observed.

TL;DR: In this paper, the authors present a review of the performance of the semiconductor gas sensor in terms of sensitivity and selectivity to various gases, and of the problems presented by its response to changes in ambient temperature and humidity.

TL;DR: A highly sensitive and selective NO 2 sensor suitable for detecting and measuring NO 2 at concentrations from 1 ppb to 10 ppm in air is described in this article, which is based on the electrical conductivity changes effected by the adsorption of NO 2 on films of lead phthalocyanine at temperatures above 100 °C.

TL;DR: In this article, it was shown that surface effects must be responsible for the fast pH response of Al2O3-gate ISFETs, and that an additional slow response resulting in hysteresis, as well as a decreased sensitivity for higher pH values, are due to the presence of OH sites buried beneath the surface.

TL;DR: A theoretical basis for the selection and effective use of an array of chemical sensors for a particular application and a measure of the selectivity and/or non-redundancy of the set of channels exhibiting the strongest signals is provided.

TL;DR: In this article, the effects of carbon monoxide, methane and water vapour on the electrical conductivity of zinc oxide at atmospheric pressure were investigated in three physical forms, polycrystalline masses, single crystals and compressed discs.

TL;DR: In this paper, a gas sensor that is based on the electrical conductivity changes effected by the adsoprtion of gases on single crystals of ZnO has been developed.

TL;DR: In this paper, the authors considered uniformly loaded circular diaphragms, which are assumed to be isotropic, and presented the results of a study on the influence of bending stress and tensile stress, which together determine the diaphrasm deflection.

TL;DR: In this paper, the Seebeck effect in silicon is investigated to evaluate its usefulness for an integrated temperature difference sensor, and the experimental results of the measurements are presented, and a maximum attainable sensitivity, which appears to be of the order of 5 to 50 mV/K for thermopiles with internal resistances of 2 k Ω to 200 kΩ, is calculated.

TL;DR: In this paper, a benzene detector with two sensors heated to 400 and 500 °C respectively selectivity for a large number of gaseous compounds is presented. But the sensitivity of the sensors is not as good as the sensitivity achieved by the sensors used in this paper.

TL;DR: In this article, a new type of ISFET with a Parylene gate as a site-free and ion-blocked membrane has been proposed for a reference electrode.

TL;DR: In this article, a gas absorption/desorption unit and water-permeable tubing in front of the detector crystal were used for reproducible detection of certain hydrocarbons at a concentration level of parts per million.

TL;DR: In this paper, a silicon probe which integrates a multi-microelectrode and interface circuits (preamplifier and analog switches) on a silicon chip by silicon planar and three-dimensional fabrication technology is presented.

TL;DR: In this paper, the influence of the catalytic activity of semiconductive metal oxides on their conductance was studied in synthetic N2-O2-CO mixtures and in exhaust gases of engines.

TL;DR: In this paper, a procedure for the optimization of cantilever-type piezoresistive and capacitive accelerometer structures with respect to high sensitivity for a given bandwidth, or to large bandwidth when the sensitivity is given, is presented.

TL;DR: In this article, the electrical properties of tin oxide have been investigated in terms of potential barrier at the SnO 2 metal junction and a chemical reaction which induces an increase of the sample's conductance at low temperature.

TL;DR: In this article, the authors proposed a theory of the sensor based on the structure of the porous dielectric, the adsorption mechanisms and the effect of semi-conducting inclusions in an insulator.

TL;DR: In this article, two types of ISFETs with electrostatic protection have been designed and tested, and they both utilize an electrically conductive layer incorporated into the gate of the ISFLET, connected via an on-chip MOSFET switch to the outside circuitry.

TL;DR: In this article, the effects of a range of catalyst poisons (sulphur-containing, halogenated and high molecular weight compounds) on the performance of porous and non-porous catalytic gas sensors have been compared.

TL;DR: In this paper, gas samples were exposed to a heated platinum or gold filament before being introduced into the sample chambers of several different amperometric sensors, and the responses of four different sensors to various compounds at 20°C were measured at sensing electrode potentials ranging from 0.9 V to 1.4 V versus RHE (reversible hydrogen electrode in the same electrolyte), with and without heated platinum filament at the sample inlet.

TL;DR: In this paper, a Si-beam accelerometer with a proof mass composed of 2.8 mg of Si has been fabricated and its performance measured, achieving a sensitivity of 5 m V g −1 which is nearly flat over a frequency range from near d.c. to about 2.5 kHz.

TL;DR: In this paper, a cubic structure polycrystalline ZrO2 gate pH-sensitive FET with SiO2 and Si3N4 dielectric layers is presented.

TL;DR: In this article, a gas sensor based on polymer-covered interdigitated electrodes is described and some preliminary results for CO, CO2, CH4 and H2O are presented.

TL;DR: In this article, the design of CMOS temperature sensors and associated acquisition circuitry is described and problems connected with the high-temperature operation of analog MOS electronics are addressed and two temperature sensors based on two different principles are presented.

TL;DR: In this paper, a study was made of ion implantation effects on field effect ion sensitivity and selectivity of SiO2 layers on Si and concluded that the ion-beam technique is suitable for fabricating ion-sensitive membranes for ISFETs.

TL;DR: In this paper, the authors used a single conventional circuit for analog quartz clocks as an oscillator, divider and as a noise-immune two-wire digital transmission system for temperature measurement.

TL;DR: In this article, the authors investigated the time behavior of Si 3 Ni 4 /SiO 2 /Si electrodes used in pH measurements and showed that both drift and sensitivity depend on the mass flow ratio n = NH 3 /SiH 2 Cl 2 that was used during Si 3 N 4 deposition, and on the electrode soaking mode between two measurements.

TL;DR: In this article, a short-channel MOS Hall device with two distributed current sources is described, and the physical limit of absolute sensitivity is assessed to be about 10 times larger than the measured value.

TL;DR: In this paper, a chemically sensitive transducer based on the specific bulk absorption of an ionic species into a macroscopic phase deposited on a substrate, capacitatively coupled to a MOSFET, is presented.