Book ChapterDOI
5.4GHz, 0.35μm BiCMOS FBAR-Based Single-Ended and Balanced Oscillators in Above-IC Technology
Eric Tournier
- pp 155-186
TLDR
In this paper, a 5 GHz FBAR-based oscillator was implemented in a 0.35-μm SiGe BiCMOS process from AMI Semiconductor, where the FBAR was directly integrated above the IC with some further process steps.Abstract:
For the last few years, one of the main challenges in circuit design has been the integration of frequency references in applications where phase noise requirements are very stringent. To overcome the usual limitation of (Bi)CMOS integrated circuits (ICs) phase noise, mainly due to the low Q-factor of standard integrated passive devices (R, L, C) inherent to low resistivity substrate, a solution has been to use BAW resonators. Indeed, thin film BAW resonators based on piezoelectric material, generally AlN or ZnO, sandwiched between two metallic electrodes, exhibit a high Q-factor, can handle high power, and can operate at high frequencies (above 10 GHz Hz), while keeping a small size and being compatible with (Bi)CMOS IC processes. The very first oscillators using FBAR and SMR resonators were designed with separately wire-bonded resonators connected to the IC circuit. This chapter deals with the world premiere realization of two 5-GHz FBAR-based oscillators, where the FBAR is directly integrated above the IC with some further process steps, compatible with (Bi)CMOS. A single-ended and a balanced version were designed. The circuits were implemented in a 0.35-μm SiGe BiCMOS process from AMI Semiconductor. From the obtained results, we show that post-processing the FBAR directly over the IC eliminates much of the parasitics and modelling issues associated with bondwires. Furthermore, it reduces the circuit area. The single-ended and balanced oscillators are based on the Colpitts configuration and achieve respectively a state-of-the-art phase noise performance (at the time of design) of − 117. 7 d b c Hz and − 121 d b c Hz at 100 K Hz offset from the 5.4-GHz carrier frequency. The balanced version allows direct driving of balanced dividers and mixers without the need of a single-ended to balanced converter. Some comparisons are also made with standard LC balanced oscillators.read more
Citations
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Journal ArticleDOI
A Ku -Band Oscillator Utilizing Overtone Lithium Niobate RF-MEMS Resonator for 5G
TL;DR: In this paper, a 12.9 GHz silicon germanium (SiGe) Pierce oscillator using a third antisymmetric overtone in a lithium niobate (LiNbO3) resonator for 5G communications is presented.
Proceedings Article
Monolithic above-IC resonator technology for integrated architectures in mobile and wireless communication
M.-A. Dubois,Jean-François Carpentier,Pierre Vincent,C. Billard,G. Parat,C.A.P. Muller,Pascal Ancey,P. Conti +7 more
TL;DR: This paper demonstrates the feasibility of an above-IC bulk acoustic wave technology for wireless applications by designed and integrated as a post-process directly above 0.25 /spl mu/m BiCMOS wafers comprising RF circuits.
Proceedings ArticleDOI
An X-Band Oscillator Utilizing Overtone Lithium Niobate MEMS Resonator and 65-nm CMOS
TL;DR: In this paper, the authors present an 8.6 GHz oscillator utilizing a third antisymmetric overtone in a lithium niobate (LiNbO 3 ) resonator for 5G communications.
References
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Book
Bulk Acoustic Wave Theory and Devices
TL;DR: This text/reference provides background for those new to the field, gives numerous problems sets and practical examples, and discusses computer aided design and analysis.
Journal ArticleDOI
The Piezo-Electric Resonator and Its Equivalent Network
TL;DR: The theory of the piezo-electric and the mechanical behavior of a quartz resonator was discussed by Voight and Cady as discussed by the authors, and the functions of the quartz as dielectric and as vibrator were shown to be separable and replaceable by a condenser in parallel with an electrical resonator.
Journal ArticleDOI
A fully integrated VCO at 2 GHz
TL;DR: In this article, an integrated voltage-controlled oscillator (VCO) at a frequency of 2 GHz is implemented in a f/sub T/= 25 GHz standard bipolar process, where the phase noise of the VCO is -136 dBc/Hz at 4.684 MHz, when the integration bandwidth and the transmit output power of 25 dBm are taken into account.