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A mechanically induced artificial potential barrier and its tuning mechanism on performance of piezoelectric PN junctions

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TLDR
In this article, a mechanically induced artificial potential barrier (MIAPB) is set up by a pair of tensile/compressive stresses acted on a piezoelectric PN junction.
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This article is published in Nano Energy.The article was published on 2022-02-01 and is currently open access. It has received 4 citations till now. The article focuses on the topics: Piezoelectricity & Stress (linguistics).

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Citations
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Suppressing piezoelectric screening effect at atomic scale for enhanced piezoelectricity

TL;DR: Zhang et al. as mentioned in this paper reported a generalizable approach to improve the piezoelectricity of ZnO via suppressing its screening effect at an atomic scale via rare earth (RE) ions doping.
Journal ArticleDOI

Mechanical energy-induced charge separation in intelligent sensing

TL;DR: Wang et al. as mentioned in this paper reviewed the energy conversion, development, and applications of interfacial charged materials in intelligent sensing and how these materials help eliminate the reliance of mechanical sensors on power supplies.
Journal ArticleDOI

Performance of piezoelectric semiconductor bipolar junction transistors and the tuning mechanism by mechanical loadings

TL;DR: In this article , a coupling model is established on piezoelectric semiconductor bipolar junction transistors (PS-BJT) subjected to mechanical loadings by abandoning depletion layer approximation and low injection assumption.
Journal ArticleDOI

The Limit Tuning Effects Exerted by the Mechanically Induced Artificial Potential Barriers on the I–V Characteristics of Piezoelectric PN Junctions

TL;DR: In this article , a mechanically induced artificial potential barrier (MIAPB) in piezoelectric semiconductor devices is set up under the action of a pair of tensile/compressive mechanical loadings.
References
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Journal ArticleDOI

Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire.

TL;DR: A piezoelectric field effect transistor (PE-FET) that is composed of a ZnO nanowire (NW) bridging across two Ohmic contacts, in which the source to drain current is controlled by the bending of the NW.
Book

Electroceramics: Materials, Properties, Applications

TL;DR: In this paper, elementary solid state science fabrication of ceramics ceramic conductors: fabrication and applications dielectrics and insulators, pyroelectric materials, electro-optic ceramic magnetoramics, magnetic ceramicas.
Journal ArticleDOI

Piezopotential gated nanowire devices: Piezotronics and piezo-phototronics

TL;DR: In this article, the authors introduce the fundamentals of piezotronics and piezo-phototronics, and give an updated progress about their applications in energy science and sensors.
Journal ArticleDOI

Nanobelts, Nanowires, and Nanodiskettes of Semiconducting Oxides—From Materials to Nanodevices

Zhong Lin Wang
- 04 Mar 2003 - 
TL;DR: In this article, it is shown that nanobelts, nanowires, and nanodiskettes of materials such as zinc oxide, gallium oxide, silica, and tin oxide can be fabricated using a vapor phase evaporation method.
Journal ArticleDOI

Amplification of Ultrasonic Waves in Piezoelectric Semiconductors

TL;DR: In this paper, the authors show that for properly prepared material, significant amplification is expected up to the microwave frequencies, and at high frequencies, gain is reduced because electron diffusion smooths out the electron bunching necessary for amplification.
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