Journal ArticleDOI
A Semiconductor Diode Multivibrator
J. J. Suran,E. Keonjian +1 more
- Vol. 43, Iss: 7, pp 814-820
TLDR
In this paper, the operation and design of a diode multivibrator circuit is described, consisting of one double-base diode, one diode and three resistors, and one capacitor.Abstract:
The operation and design of a novel semiconductor multivibrator circuit is described Consisting of one double-base diode, one diode, three resistors, and one capacitor, the diode multivibrator affords a circuit economy of two-to-one over the more conventional Eccles-Jordan configuration The active element is the double-base diode, which is a three-terminal single-junction negative-resistance semiconductor device Applications of the diode multivibrator to square-wave oscillators and delayed-pulse generators are illustrated Control of the period of oscillation or variation of the pulse-delay time is accomplished by the variation of a single capacitor Hence, this new circuit simplifies the design of astable, monostable or bistable multivibratorsread more
Citations
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Journal ArticleDOI
A cardiac pacemaker model
TL;DR: The pacemaker model is analyzed in detail in order to show that its behaviour is similar to that of cardiac pacemaker cells and is very useful for the study of interactions between cardiac pacemakers and the description of the mechanism of arrhythmias.
Journal ArticleDOI
Two-Terminal Analysis and Synthesis of Junction Transistor Multivibrators
J. Suran,F. Reibert +1 more
TL;DR: In this article, the basic junction-transistor multivibrator circuit is analyzed from the point of view of a circuit designer who wants to know: (a) how to predict the performance of a particular configuration, and (b) whether a circuit may be either bistable, or monostable, from a given set of specifications.
Journal ArticleDOI
Small-signal wave effects in the double-base diode
TL;DR: In this paper, the frequency and transient response equations for the double-base diode were calculated from theory and checked experimentally and the effects of carrier recombination and electric field upon the response characteristics were evaluated and experimental results were presented.
Journal ArticleDOI
Transient Response Characteristics of Unijunction Transistors
J. Suran,B. Eriksen +1 more
TL;DR: In this article, the high-frequency and transient response characteristics of silicon unijunction transistors are described and a previously published solution of the electrodynamic equations, taking into account field and recombination effects, is used to calculate theoretical frequency and transistors response characteristics which are subsequently compared to experimental measurements.
Journal ArticleDOI
Generalized Characterization of Unijunction Transistor Networks
J.S. Linder,H.M. Barnard +1 more
TL;DR: The static characteristics of unijunction transistors are exhibited by two surfaces in three-dimensional space to examine a general formulation of the problem of analysis and design with a device that is characterized by a nonlinear relationship among four variables.
References
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Journal ArticleDOI
Low–frequency circuit theory of the double–base diode
TL;DR: In this paper, the double-base diode is represented as a single-junction semiconductor triode, and the negative resistance is bounded by two positive-resistance regions, one of considerably high magnitude which corresponds to the cut-off state and one of very low magnitude which correspond to a saturating condition.