Patent
α-tantalum lead for use with magnetic tunneling junctions
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TLDR
In this paper, a method and system for providing a tunneling junction is described, which includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer.Abstract:
A method and system for providing a tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to an α-Ta lead.read more
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Tunnel magnetoresistance read head with narrow shield-to-shield spacing
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References
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Patent
Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
TL;DR: In this article, a magnetic tunnel junction is made up of two ferromagnetic layers, one having its magnetic moment fixed and the other free to rotate, an insulating tunnel barrier layer between the two layers for permitting tunneling current perpendicularly through the layers, and a nonferromagnetic layer located at the interface between the tunnel barrier and one of the layers.
Patent
Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
TL;DR: In this article, a magnetic tunnel junction (MTJ) device is used as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array.
Patent
Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment
TL;DR: In this paper, the magnetic tunnel junction element in the device is made up of a ferromagnetic multilayer structure that has high coercivity to maintain its magnetic moment fixed in the presence of an applied magnetic field in the range of interest.
Patent
Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes
Jijun Sun,Satoru Araki +1 more
TL;DR: In this article, a magnetic tunnel junction device and a method for making the same is provided. And a barrier is provided on the first ferromagnetic portion, and a second barrier may be oxidized or annealed on the barrier.
Patent
Magnetic random access memory with thermally stable magnetic tunnel junction cells
TL;DR: In this article, a magnetic tunnel junction (MTJ) memory cell and a magnetic random access memory (MRAM) incorporating the cells have upper and lower cell electrodes that are formed of bilayers that provide electrical connection between the cells and the copper word and bit lines of the MRAM.