AL/Si and Al/Poly‐Si Contact Resistance in Integrated Circuits

TLDR: In this paper, the effects of sintering temperature, contact geometry, and contact geometry on Al/Si and Al/poly-Si contact resistance were investigated. And the results showed that the interface resistance of both Al and poly-Si contacts is independent of the length of the contact and inversely proportional to the width.

Abstract: This paper presents results on the effects of sintering temperature, sintering time, and contact geometry on Al/Si and Al/poly‐Si contact resistance. At sintering temperatures >450°C the resistance of p‐type contacts is virtually constant and independent of time. The resistance of n‐type contacts, particularly to poly‐Si, increases with increasing sintering temperature for . This is attributed to the precipitation of a p‐type (Al‐doped) layer on n‐contacts during sintering. The interface resistance of both Al/Si and Al/poly‐Si contacts is independent of the length of the contact and inversely proportional to the width of the contact.