Patent
Apparatus and method for depositing an oxide film
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TLDR
In this paper, a process gas mixture consisting of less than 6% oxygen, silicon gas, and predominantly hydrogen was used to form an oxide film on a substrate, and a process temperature between 800° C and 1300° C was used.Abstract:
Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a hydrogen gas, and a process temperature between 800° C. and 1300° C. During the deposition of the oxide film, the process gas mixture comprises less than 6% oxygen, silicon gas, and predominantly hydrogen.read more
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References
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Thermal heat pump
TL;DR: In this paper, the authors describe a thermal heat pump consisting of a heat pipe, in which the vapor passage located for heat dissipation between the Warmeubertragungszone for heat supply and the WARMEBERTRTAGZENzone (16) changing an over its length, has the flow velocity of the vapor, first increasing and then degrading cross-section and in which in the area of increased vapor velocity another warmeubertraagung zone with heat supply or removal is the increased vapor velocities may be subsonic or supersonic range.
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