Journal ArticleDOI
Atomistic capacitance of a nanotube electromechanical device
Slava V. Rotkin,Vaishali Shrivastava,Kirill A. Bulashevich,Narayana R. Aluru,Narayana R. Aluru +4 more
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TLDR
In this paper, an atomistic capacitance for a single-wall carbon nanotube in a nano-electromechanical device was derived using a continuum model for the geometrical capacitance, and statistical and quantum mechanical approaches for the quantum capacitance of the nanotubes.Abstract:
An atomistic capacitance is derived for a single-wall carbon nanotube in a nano-electromechanical device Multi-scale calculation is performed using a continuum model for the geometrical capacitance, and statistical and quantum mechanical approaches for the quantum capacitance of the nanotube The geometrical part of the capacitance is studied in detail using full three-dimensional electrostatics Results reported in this paper are useful for compact modeling of the electronic and electromechanical nanotube devicesread more
Citations
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Sensors and actuators based on carbon nanotubes and their composites: A review
TL;DR: In this paper, a review of the recent advances in nanotubes and nanotube-based composite sensors and actuators, with a particular emphasis on their electromechanical behavior is presented.
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Numerical Analysis of Nanotube Based NEMS Devices — Part II: Role of Finite Kinematics, Stretching and Charge Concentrations
TL;DR: In this article, a nonlinear analysis of nanotuhe-based nano-electromechanical systems is reported, where the complete nonlinear equation of the elastic line of the nanotube is derived and then numerically solved.
Journal ArticleDOI
Numerical Analysis of Nanotube-Based NEMS Devices—Part I: Electrostatic Charge Distribution on Multiwalled Nanotubes
Changhong Ke,Horacio D. Espinosa +1 more
TL;DR: In this article, the authors investigated the charge distribution on the surface of a biased conductive, finite-length, cylindrical nanotube, free standing above an infinite grounded plane.
Journal ArticleDOI
Universal description of channel conductivity for nanotube and nanowire transistors
TL;DR: In this article, a theory of drift-diffusion transport in a low-dimensional field effect transistor is developed, and two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance.
Journal ArticleDOI
Resonant pull-in of a double-sided driven nanotube-based electromechanical resonator
TL;DR: In this article, the authors theoretically investigate the electromechanical dynamics of a double-sided driven cantilevered nanotube-based EM resonator and derive closed-form analytical solutions capable of predicting the steady-state resonant oscillation of the device and its resonant pull-in conditions using an energy-based method.
References
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Book
Electrodynamics of continuous media
TL;DR: In this article, the propagation of electromagnetic waves and X-ray diffraction of X rays in crystals are discussed. But they do not consider the effects of superconductivity on superconducting conductors.
Book
Physical properties of carbon nanotubes
TL;DR: In this paper, an introductory textbook for graduate students and researchers from various fields of science who wish to learn about carbon nanotubes is presented, focusing on the basic principles behind the physical properties and giving the background necessary to understand the recent developments.
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Carbon Nanotube Inter- and Intramolecular Logic Gates
TL;DR: In this paper, the authors showed that n-type carbon nanotubes can be prepared not only by doping but also by simple annealing of SWNT-based p-FETs in a vacuum.
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Quantum capacitance devices
TL;DR: In this paper, a two-dimensional electron gas (2DEG) in a quantum well or inversion layer, unlike an ordinary grounded metallic plane, does not completely screen an applied transverse electric field, but partial penetration of an external field through a highly conducting 2DEG allows the implementation of several novel high-speed devices, including a threeterminal resonant tunneling transistor and a gate-controlled thermionic emission transistor.
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Calculation of pull-in voltages for carbon-nanotube-based nanoelectromechanical switches
TL;DR: In this paper, the pull-in voltage characteristics of double-wall carbon nanotubes suspended over a graphitic ground electrode were studied and parametrized continuum models for three coupled energy domains: the elastostatic energy domain, the electrostatic energy domain and the van der Waals energy domain.