Journal ArticleDOI
Beam propagation method simulation and analysis of quantum dot flared semiconductor optical amplifiers in continuous wave high-saturation regime
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TLDR
In this paper, the authors investigated the effect of saturation effects on the performance of semiconductor optical amplifiers in a continuous wave (CW) high-saturation regime using the finite difference beam propagation method (FD-BPM) model.Abstract:
The authors present the investigation results of flared quantum dot (QD) semiconductor optical amplifiers (SOAs) in a continuous wave (CW) high-saturation regime using the finite difference beam propagation method (FD-BPM) model By combining the BPM model with pre-calculated results obtained from multi-population rate equations (MPREs), the authors include in a rigorous way the non-linear gain and refractive index variation of semiconductor gain medium caused by saturation effects in QD Using this model, a comprehensive analysis of the symmetric tapered QD SOAs is reported, verifying the influence of saturation effect on the characteristics of such devices and optimising the design of both gain and weakly index-guided structures for operation in the high-saturation regimeread more
Citations
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Modelling passive mode-locking in Quantum-Dot Lasers: a comparison between a Finite-Difference Travelling-Wave model and a Delayed Differential Equation approach
TL;DR: In this article, a detailed comparison between a finite-difference traveling wave (FDTW) model and a delayed differential equation (DDE) approach for the simulation of passive mode-locking in quantum dot lasers with both ring and Fabry-Perot cavities is presented.
Journal ArticleDOI
Ultra-Short Pulse Generation in a Three Section Tapered Passively Mode-Locked Quantum-Dot Semiconductor Laser.
Stefan Meinecke,Lukas Drzewietzki,Christoph Weber,Benjamin Lingnau,Stefan Breuer,Kathy Lüdge +5 more
TL;DR: A microscopically motivated traveling-wave model is proposed, which optimizes the computation time and naturally allows insights into the internal carrier dynamics of the pulsed emission dynamics of a three section tapered semiconductor quantum dot laser.
Journal ArticleDOI
Picosecond pulse amplification up to a peak power of 42 W by a quantum-dot tapered optical amplifier and a mode-locked laser emitting at 126 µm
Christoph Weber,Lukas Drzewietzki,Mattia Rossetti,Tianhong Xu,Paolo Bardella,Hercules Simos,Charis Mesaritakis,Mike Ruiz,Igor Krestnikov,Daniil A. Livshits,Michel Krakowski,Dimitris Syvridis,Ivo Montrosset,Edik U. Rafailov,Wolfgang Elsäßer,Stefan Breuer +15 more
TL;DR: This work experimentally study the generation and amplification of stable picosecond-short optical pulses by a master oscillator power-amplifier configuration consisting of a monolithic quantum-dot-based gain-guided tapered laser and amplifier emitting at 1.26 µm without pulse compression, external cavity, gain- or Q-switched operation.
Journal ArticleDOI
High-power quantum-dot superluminescent tapered diode under CW operation
TL;DR: A high-power quantum-dot superluminescent diode is demonstrated under continuous-wave operation, with an output power of 137.5 mW and a corresponding spectral bandwidth of 21 nm, which represents not only the highest output power, but also a record-high power spectral density.
Journal ArticleDOI
Coupling efficiency between ball lens capped laser diode chip and single mode fiber
TL;DR: In this article, the authors analyzed the coupling efficiency with working distance between laser diode, ball lens and single mode fiber, and the maximum coupling efficiency is located at 2400μm.
References
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Journal ArticleDOI
Transparent boundary condition for the beam propagation method
TL;DR: In this article, a new boundary condition was proposed for beam propagation calculations that passes outgoing radiation freely with minimum reflection coefficient (as low as 3*10/sup -8/).
Journal ArticleDOI
Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled In x Ga 1 − x A s / G a A s quantum dot lasers
TL;DR: In this article, the effect of homogeneous broadening of the optical gain on lasing spectra in self-assembled quantum dot laser was investigated, and it was shown that at room temperature the dot ensemble contributes to a narrow-line lasing collectively via the homogeneity of optical gain.
Journal ArticleDOI
Model for passive mode locking in semiconductor lasers
Andrei Vladimirov,Dmitry Turaev +1 more
TL;DR: In this paper, a model describing passive mode locking, a set of differential equations with time delay, was derived and analyzed in a parameter range typical of semiconductor lasers and the limit of a slow saturable absorber was analyzed analytically.
Journal ArticleDOI
InGaAs Quantum-Dot Mode-Locked Laser Diodes
TL;DR: In this article, the authors present a selection of recent advances on two-section passively mode-locked InGaAs-based quantum-dot laser diodes for pulse generation for repetition rates ranging from 310 MHz to 240 GHz, with pulse durations ranging from the picosecond to the sub-400 fs regime.
Journal ArticleDOI
Nonlinear mechanisms of filamentation in broad-area semiconductor lasers
TL;DR: In this paper, the authors present a theoretical model to analyze three nonlinear mechanisms that can lead to filamentation in broad-area semiconductor lasers: gain-saturation-induced changes in the refractive index through the linewidth-enhancement factor, self-focusing due to heat-induced index changes, and self-defocusing through intensity-dependent index changes in cladding layer.
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