Patent
Bipolar read-only-memory unit having self-isolating bit-lines
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TLDR
In this article, a semiconductor read-only-memory (ROM) unit is fabricated in large-scale-integrated form utilizing the formation of self-isolating bit-line surface regions of one conductivity type directly in a bulk region of the opposite conductivities type.Abstract:
A semiconductor read-only-memory (ROM) unit fabricated in large-scale-integrated form utilizing the formation of self-isolating bit-line surface regions of one conductivity type directly in a bulk region of the opposite conductivity type. Channel-stop regions of the same conductivity type as the bulk region are formed in the spaces between bit-line regions. Metallic word-lines overlying and orthogonal to the bit-line regions are formed, separated from the bit-line regions by an insulating layer. The memory cell comprises a single Schottky diode. Such a diode is made or not at each word-line/bit-line crossover location depending respectively on whether or not an aperture is formed in the insulating layer during fabrication to permit the word-line to contact a lightly doped portion of the bit-line. ROM units formed by this method are characterized by small area, high speed, low power dissipation and low cost.read more
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References
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Proceedings ArticleDOI
GIMIC-O - A low cost non-epitaxial bipolar LSI technology suitable for application to TTL circuits
P. T. Panousis,R. L. Pritchett +1 more
TL;DR: In this paper, a bipolar technology for low power LSI applications at a wafer processing cost below those of MOS technologies was developed, which is directed toward low power lsi applications.
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Fixed data memory utilizing schottky diodes
TL;DR: In this article, the cathodes of the Schottky diodes are guided together, for one row or column, over a buried layer, for fixed data memory, and a fixed-length memory is used.