Journal ArticleDOI
Calculation of the atomic geometries of the (110) surfaces of III-V compound semiconductors
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In this paper, a total energy minimization method was applied to predict the minimum energy atomic geometries of the (110) surfaces of GaP, GaAs, GaSb, InP, InAs and InSb.About:
This article is published in Surface Science.The article was published on 1985-01-02. It has received 96 citations till now. The article focuses on the topics: Electron diffraction.read more
Citations
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Journal ArticleDOI
Scanning tunneling microscopy of semiconductor surfaces
Joel A. Kubby,John J. Boland +1 more
TL;DR: In this article, a comprehensive review of the structures of the clean, low-index surfaces of elemental and compound semiconductors is presented using the general physical principles that determine them.
Book ChapterDOI
Physics of Surfaces
TL;DR: A brief account of the most important experimental and theoretical methods employed in surface physics is given in this paper, where the use of optical spectroscopy in the study of clean semiconductor surfaces is described in detail.
Journal ArticleDOI
Photoelectron spectroscopy of surface states on semiconductor surfaces
Göran V. Hansson,Roger Uhrberg +1 more
TL;DR: A critical review of recent extensive studies of semiconductor surface states by photoelectron spectroscopy is given in this article, focusing on Si, Ge and GaAs surfaces, but other III-V as well as II-VI and IV-VI semiconductor surfaces are also discussed.
Journal ArticleDOI
Nano-scale properties of defects in compound semiconductor surfaces
TL;DR: In this article, the atomic-scale properties of point defects and dopant atoms exposed on and in cleavage surfaces of III-V and II-VI semiconductors are reviewed.
Journal ArticleDOI
Normal incidence X-ray standing wave determination of adsorbate structures
TL;DR: In this article, the authors reviewed the X-ray standing wavefield absorption applied to the determination of adsorbate structures at the solid-vacuum interface with particular emphasis on those studies exploiting normal incidence to the Bragg scatterer planes which allows the method to be used to study adsorption structures at typical metal as well as semiconductor single crystals.
References
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Journal ArticleDOI
Simplified LCAO Method for the Periodic Potential Problem
John C. Slater,G. F. Koster +1 more
TL;DR: In this paper, the LCAO interpolation method was used as an interpolation technique in connection with more accurate calculations made by the cellular or orthogonalized plane-wave methods.
Journal ArticleDOI
A Semi-empirical tight-binding theory of the electronic structure of semiconductors†☆
TL;DR: In this article, a semi-empirical tight-binding theory of energy bands in zincblende and diamond structure materials is developed and applied to the following sp3-bonded semiconductors: C, Si, Ge, Sn, SiC, GaP, GaAs, GaSb, InP, InAs, InSb.
Journal ArticleDOI
Theory of Substitutional Deep Traps in Covalent Semiconductors
TL;DR: In this paper, the atomic energies of zinc-blende semiconductors were predicted and related to the impurity's atomic energies and to the dangling bond (ideal vacancy) energies.
Journal ArticleDOI
Energy-Minimization Approach to the Atomic Geometry of Semiconductor Surfaces
TL;DR: In this article, the (110) surface atomic geometries of GaAs and ZnSe and of 2 \ifmmode\times\else\texttimes\fi{} 1 reconstructed (111) surface of Si are calculated by minimizing the total energy of the electron-ion system.