Journal ArticleDOI
Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state
V. I. Talanin,I. E. Talanin +1 more
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TLDR
In this paper, the formation of silicon carbon and siliconoxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation.Abstract:
The formation of silicon–carbon and silicon–oxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation. It has been confirmed that the complex formation begins in the vicinity of the crystallization front. It has been shown that the Vlasov model of a solid state can be used not only for the investigation of hypothetical ideal crystals, but also for the description of the formation of a defect structure of real crystals.read more
Citations
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Journal ArticleDOI
High-Temperature Precipitation of Impurities within the Vlasov Model for Solids
V. I. Talanin,Igor E. Talanin +1 more
TL;DR: In this paper, a qualitative model of the formation of electric centers is proposed, which directly relates their origin to the initial defect structure of silicon, and it is shown that the concepts and principles of the Vlasov physics are absolutely applicable in solid-state physics.
Journal ArticleDOI
Complexation in germanium in accordance with Vlasov's model for solids
V.I. Talanin,I. E. Talanin +1 more
TL;DR: Using Vlasov's model for solids, the diffusion model of defect formation in germanium was verified in this paper, where the possibility of applying Vlasod's model to describe complexation in dislocation-free gernium single crystals was shown.
Journal ArticleDOI
Theoretical study on low-lying states of silicon iodide:MRCI+Q calculation including spin-orbit coupling
TL;DR: In this article , the fine structure of electronic states correlating with the three lowest dissociation limits of the silicon iodide (SiI) molecule was investigated by using multireference configuration interaction method with the Davidson correction (MRCI+Q).
Book ChapterDOI
Introductory Chapter: Description of the Real Monocrystalline Structure on the Basis of the Vlasov Model for Solids
Journal ArticleDOI
Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon
TL;DR: In this article, an algorithm for calculating the defect structure of semiconductor silicon crystals was proposed, which makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal.
References
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Book
The theory of transformations in metals and alloys
J.W. Christian,H. M. Otte +1 more
TL;DR: In this paper, the authors present a general introduction to the theory of transformation kinetics of real metals, including the formation and evolution of martensitic transformations, as well as a theory of dislocations.
Journal ArticleDOI
The mechanism of swirl defects formation in silicon
TL;DR: In this article, the first stage of defect formation is recombination and diffusion of vacancies and self-interstitials in the vicinity of the crystallization front, followed by several successive stages: diffusion of interstitials to the crystal surface, nucleation of primary interstitial clusters, cluster growth, conversion of clusters into other forms (particularly dislocation loops).
Journal ArticleDOI
The effects of deviations from Lorentz–Berthelot rules on the properties of a simple mixture
Dezső Boda,Douglas Henderson +1 more
TL;DR: In this article, the effects of deviations from the energy and size rules on the radial distribution functions of a simple mixture were studied from simulations, and it was shown that deviations from either rule have a small effect on radial distribution function.
Journal ArticleDOI
Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides
TL;DR: In this paper, the atomic structure of nonstoichiometric silicon nitrides and oxides is reviewed and summarized, and the development of technology for synthesizing such films requires a detailed understanding of their atomic structure.
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