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Journal ArticleDOI

Conductivity and Structural Studies on Disordered Amorphous Conducting Carbon Films

V. Meenakshi, +2 more
- 01 Jul 1996 - 
- pp 307-310
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TLDR
Amorphous carbon films are prepared by pyrolysis of Tetra Chloro Phthalic Anhydride (TCPA) at different temperatures (700 degrees C to 900 degrees C) and DC conductivity measurements are done on the films in the temperature range 300K to 4.2K as discussed by the authors.
Abstract
Amorphous carbon films are prepared by the pyrolysis of Tetra Chloro Phthalic Anhydride (TCPA) at different temperatures (700 degrees C to 900 degrees C). DC Conductivity measurements are done on the films in the temperature range 300K to 4.2K. It shows an activated temperature dependence with a small activation energy (0.02eV to 0.003eV). Variable range hopping is observed at low temperatures. The films are characterised by XRD, SEM, TEM, AFM and microRaman. The electronic structure of the film is used to explain the electrical behaviour.

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Raman spectra of ion beam sputtered amorphous carbon thin films deposited from camphoric carbon

TL;DR: In this paper, thin films of carbon were deposited on single crystal silicon and quartz substrates by simple ion beam sputtering of camphoric carbon target, obtained from camphor: a natural source, at room temperature.
Journal ArticleDOI

Preparation and microstructure properties of tetrahedral amorphous carbon films by pulsed laser deposition using camphoric carbon target

TL;DR: In this paper, the properties of tetrahedral amorphous carbon (ta-C) films grown by pulsed laser deposition (PLD) using camphoric carbon (CC) target and their respective effects of diamond percentages by weight in the target (Dwt.%) are discussed.
Journal ArticleDOI

Preparation and characterization of boron-incorporated amorphous carbon films from a natural source of camphoric carbon as a precursor material

TL;DR: The boron-incorporated amorphous carbon (a-C:B) film has been prepared by pulsed laser deposition (PLD) in high vacuum at room temperature using natural source of camphoric carbon as a precursor material.
Journal ArticleDOI

Iodine doping in amorphous carbon thin-films for optoelectronic devices

TL;DR: In this paper, the effects of iodine doping on the optical and structural properties of amorphous carbon thin-films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (CVD) at low temperature (<100°C).
Journal ArticleDOI

Raman analysis of laser annealed nitrogen doped amorphous carbon film

TL;DR: A micro-Raman spectrometer has been used to study nitrogen doped amorphous hydrogenated carbon (a-C/H(N)) films, which are annealed by a focused argon ion (514.5nm) laser operating at the power density of 300, 750 and 1500 W/mm 2, respectively.
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