Journal ArticleDOI
Damage‐Enhanced Creep in a Siliconized Silicon Carbide: Mechanics of Deformation
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TLDR
In this article, three loading modes (tension, compression, and bending) are considered in the analysis of flexural deformation of silicon carbide at elevated temperatures: tension, cavitation at stresses in excess of a temperature-dependent threshold level, resulting in bilinear power-law creep, and compression, where greater applied stresses are required to achieve the same rate of strain.Abstract:
Continuum mechanics methods were employed to analyze creep deformation of a grade of siliconized silicon carbide at elevated temperatures. Three loading modes (tension, compression, and bending) are considered in this analysis. In tension, deformation is accompanied by cavitation at stresses in excess of a temperature-dependent threshold level, resulting in bilinear power-law creep. In compression, greater applied stresses are required to achieve the same rate of strain, and although bilinear creep behavior is also observed, a single power-law creep equation was assumed to simplify the mathematical analysis of the flexure problem. Asymmetrical creep in siliconized silicon carbide leads to a number of unique features in flexural creep. At steady state, a threshold bending moment exists below which no damage occurs. The neutral axis shifts from the geometric center toward the compressive side of the specimen by an amount that depends on the level of applied stress. Cavitation zone shapes, which are predicted to develop in a four-point bend specimen as a function of load, are found to be in qualitative agreement with those obtained experimentally. For transient creep under bending, the time-dependent neutral axes for stress and strain do not coincide, although they do converge toward a single axis at steady state. Quantitative predictions are given for relaxation of tensile stresses at the outer fiber, reverse loading in the midplane region, and the growth of the damage zone toward the compressive side of the flexural specimen. This load redistribution leads to a prolonged transient stage as compared to its counterpart in uniaxial creep.read more
Citations
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Journal ArticleDOI
Damage‐Enhanced Creep in a Siliconized Silicon Carbide: Phenomenology
TL;DR: In this article, the creep behavior of reaction-bonded silicon carbide was characterized at a temperature of 1300°C and the authors found that the creep rate in tension was at least 20 times higher than that obtained in compression.
Journal ArticleDOI
Creep Mechanisms in Multiphase Ceramic Materials
TL;DR: In this paper, a critical survey of the experimental data and of the models developed to rationalize them is presented, focusing on three materials systems: whisker-reinforced ceramics (e.g., SiC-whisker reinforced Al 2 O 3 ).
Journal ArticleDOI
Creep of silicon nitride
TL;DR: In this paper, the most commonly invoked models for the microscopic mechanisms assumed to take place during creep (viscous flow, solution-precipitation, cavitation and shear thickening) are analyzed.
Journal ArticleDOI
Creep behavior of a sintered silicon nitride
TL;DR: In this paper, a commercial sintered silicon nitride has been crept in bending and compression at temperatures of 1100°C to 1400°C, and the model predicts an initial constant strain rate at low strains as the intergranular phase is squeezed out from between grains under compression.
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An overview of ceramic molds for investment casting of nickel superalloys
TL;DR: In this article, the authors analyze the limitations of ceramic molds and illustrate how to address them, particularly regarding ceramic mold and slurry design, processing of shells and cores, material selection, and testing and characterization.
References
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Journal ArticleDOI
Calculation of Stresses and Strains in Four-Point Bending Creep Tests
TL;DR: In this article, an analysis of strains and stresses in four-point bending creep tests in the limit of small beam deflections resulted in a general equation which relates the load-point deflection, the applied load, the creep exponent (N), and the geometrical parameters of the loading system.
Journal ArticleDOI
Damage‐Enhanced Creep in a Siliconized Silicon Carbide: Phenomenology
TL;DR: In this article, the creep behavior of reaction-bonded silicon carbide was characterized at a temperature of 1300°C and the authors found that the creep rate in tension was at least 20 times higher than that obtained in compression.
Journal ArticleDOI
Estimation of power-law creep parameters from bend test data
TL;DR: In this paper, the authors derived governing equations for the location of the neutral axis of a beam under bending which does not in general pass through the centroid of the cross-section, and for the creep response in terms of both curvature rate and load-point displacement rate as functions of the applied moment and power-law creep parameters.
Journal ArticleDOI
Determination of tensile and compressive creep behaviour of ceramic materials from bend tests
TL;DR: In this paper, the authors developed equations that permit the determination of individual compressive and tensile creep rates from four-point bend test measurements made on trapezoidal bars, and showed that the individual tensile and compressive creep rates determined in this manner were consistent with other literature data measured in direct tension and compression tests.