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Proceedings ArticleDOI

Design and fabrication of integrated optical 1×8 power splitter in SOI substrate using large cross-section single-mode waveguides

29 Dec 2010-Vol. 8173, pp 67-72
TL;DR: In this article, an integrated optical 1x8 power splitter has been designed and fabricated using large cross-section singlemode rib672 waveguides (input/output) in SOI substrate, and the fabricated devices have been characterized in terms of excess loss, insertion loss and uniformity in transmitted powers at each of the output ports.
Abstract: An integrated optical 1x8 power splitter has been designed and fabricated using large cross-section single-mode rib waveguides (input/output) in SOI substrate. The fabricated devices have been characterized in terms of excess loss, insertion loss and uniformity in transmitted powers at each of the output ports. The corresponding typical values are found to be 7 dB, 15 dB, and 0.7 dB, respectively. A prototype 1x8 power splitter has been fiber pigtailed, packaged and also characterized. The characterization results suggest that such power splitter (with further improved design parameters) can be potentially useful in passive/active optical networks operating in the communication window of λ ~ 1550 nm.
Citations
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Proceedings ArticleDOI
TL;DR: In this paper, a 2×2 integrated optical MZI that shows both polarization-independent and dispersion-free response over a wide wavelength range (C+L optical band) in SOI platfo rm -for the first time to our knowledge.
Abstract: Polarization dependencies and dispersions are the two major bottlenecks in waveguide based silicon photonic devices for various applications – especially in DWDM systems. In this paper, we present the design and experimental demonstration of a 2×2 integrated optical MZI that shows both polarization-independent and dispersion-free response over a wide wavelength range (C+L optical band) in SOI platfo rm - for the first time to our knowledge. The entire device footprint (W×L) is ~ 0.8 mm × 5.2 mm; which is comprised of optimally designed single-mode waveguides (for input/output and interferometer arms) and a pair of MMI based 3-dB power splitters. To monitor the wavelength dependent performance, unbalanced arm lengths (L ~ 3037 µm, L+u L ~ 3450 µm) were introduced to construct the MZI. The differential arm length (u L ~ 412 µm) has been specifically chosen to provide alternate ITU channel transmission peaks at both the output ports alternatively. A ccordingly, the fabricated de vice separates 100 GHz DWDM channel wavelengths alternatively into two output ports and is nearly insensitive to the polarization of the guided light. We have observed a uniform channel extinction of ~ 10 dB (~ 6 dB) at both ports with a 3-dB bandwidth of ~ 110 GHz (~120 GHz) for TM (TE) polarization over the wavelength range of 1520 nm to 1600 nm. The lower extinction for TE polarization is due to its relatively higher bending loss in the lo nger arm of the MZI. This can be adjusted by introducing identical bends in both the arms. Keywords: Silicon Photonics, Integrated Optics, Mach-Zehnder Interferometer, MMI splitter, waveguides, polarization-independent, dispersion-free, wavelength division multiplexing

3 citations

Patent
09 Apr 2019
TL;DR: In this article, a 1*16 optical splitter with a special Y-branched type bending structure is presented, which solves the problem that the distance between an input port and an output port is long, and meets the requirements for the high integration of the optoelectronic devices.
Abstract: The invention discloses a 1*16 optical splitter with a special Y-branched type bending structure. The overall length Z of the 1*16 optical splitter is equal to 35,000mum, the spacing Xtheta of every two adjacent output waveguides is equal to 127mum, and both input waveguides and the output waveguides have a rectangular cross section of 6mum*6mum. A traditional 1*16 optical splitter has the problemthat the distance between an input port and an output port is long, so that the overall length of the optical splitter is long, and the requirement for the high integration of existing optoelectronicdevices is difficult to achieve. The 1*16 optical splitter with the special Y-branched type bending structure provided by the invention solves the problem existing in a traditional 1*16 optical splitter; and the 1*16 optical splitter is small in size and low in loss, and meets the requirements for the high integration of the optoelectronic devices.
References
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Journal ArticleDOI
TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
Abstract: The pace of the development of silicon photonics has quickened since 2004 due to investment by industry and government. Commercial state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55-mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA). The preliminary results indicate that the silicon photonics are truly CMOS compatible. RD however, lasing has not yet been attained. The new paradigm for the Si-based photonic and optoelectric integrated circuits is that these chip-scale networks, when suitably designed, will operate at a wavelength anywhere within the broad spectral range of 1.2-100 mum, with cryocooling needed in some cases

1,789 citations


"Design and fabrication of integrate..." refers background in this paper

  • ...Various photonic devices like directional couplers ([3]), star couplers ([4]), arrayed waveguide gratings (AWGs) ([5]), modulators ([6]), light sources [7] etc....

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Book
01 Jan 2000

1,493 citations


"Design and fabrication of integrate..." refers background or methods in this paper

  • ...The electric field profile of the diffracted wave g ́(x) at far field (L is very large in comparison to the aperture/width of the input waveguide) can be derived from the modified Fresnel - Kirchoff’s diffraction formula [13] as:...

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  • ...To understand the working principle of such star coupler ([13]), a simple one dimensional diffraction theory has been discussed in Section 2....

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Journal ArticleDOI
TL;DR: A detailed description of phased-array operation and design is presented and an overview of the most important applications is given.
Abstract: Wavelength multiplexers, demultiplexers and routers based on optical phased arrays play a key role in multiwavelength telecommunication links and networks. In this paper, a detailed description of phased-array operation and design is presented and an overview is given of the most important applications.

962 citations


"Design and fabrication of integrate..." refers background in this paper

  • ...INTRODUCTION The multifunctional integrated optical devices are preferred in fiber-optic communication technology and sensor applications ([1])....

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Journal ArticleDOI
TL;DR: In this article, mode-matching and beam-propagation methods are used to analyze single-mode operation of optical GeSi-Si and Si-SiO/sub 2/ semiconductor rib waveguides.
Abstract: Mode-matching and beam-propagation methods are used to analyze single-mode operation of optical GeSi-Si and Si-SiO/sub 2/ semiconductor rib waveguides. The waveguide dimensions that allow only the fundamental HE/sub 00/ or EH/sub 00/ mode to propagate have been determined. For both material systems, it is found that the rib can be several microns wide and several microns high, thus allowing efficient coupling to single-mode fibers. Numerical examples are given for monomode guiding group-IV materials, but the results apply to III-V rib waveguides. It is shown that single-mode rib guides with large cross sections are feasible as long as the waveguide is at least several millimeters long. >

696 citations


"Design and fabrication of integrate..." refers methods in this paper

  • ...parameters were chosen according to the Soref’s condition ([15])....

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Journal ArticleDOI
TL;DR: In this article, the contrast of Fabry-Perot resonances in low-finesse (end face polished) integrated optical resonators is measured to determine an upper limit of the waveguide attenuation coefficient.
Abstract: We propose to measure the contrast of Fabry-Perot resonances in low-finesse (end face polished) integrated optical resonators to determine an upper limit of the waveguide attenuation coefficient. The method is discussed; its absolute accuracy increases with decreasing loss. As example, experimental results are presented for 3 and 10 μm wide Ti: LiNbO3 strip guides; the attenuation coefficients are 0.46 dB/cm (EH11) in the narrower guide at λ=0.63 μm, respectively 0.19 dB/cm (EH11) and 0.09 dB/cm (HE11) in the 10 μm wide guide at λ=1.15 μm.

368 citations


"Design and fabrication of integrate..." refers methods in this paper

  • ...Low-finesse Fabry-Perot measurement technique [16] was used for the measurement of Fig....

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