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Journal ArticleDOI

Development and vapour pressure of metallo-organic precursors of copper for the deposition of copper thin films by a plasma-assisted MOCVD

TL;DR: A group of metallo-organic complexes of copper, namely bis(N-R-salicylaldiminato)Cu(II) (R: methyl to n-pentyl, hereafter referred to as 1-5) were prepared and their volatile nature was confirmed by TG/DTA as discussed by the authors.
Abstract: A group of metallo-organic complexes of copper, namely bis(N-R-salicylaldiminato)Cu(II) (R: methyl to n-pentyl, hereafter referred to as 1–5) were prepared and their volatile nature was confirmed by TG/DTA. The molecular masses (M) of 1–5 were confirmed by mass spectrometry. The vapour pressure (pe) for precursors 1–5 determined by a transpiration technique using the Clausius–Clapeyron relation yielded the values of 91 ± 2, 84 ± 4, 100 ± 2, 92 ± 2, and 72 ± 2 kJ mol−1 for ΔHovap, respectively, for 1–5. The thin films deposited by plasma-assisted MOCVD technique contain predominantly metallic copper in orientation. The SEM images of the thin films exhibit continuous nanoball-like structure.
Citations
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TL;DR: In this article, experimental data on the saturated vapor pressure and melting of DICBonyl (hexafluoroacetylacetonato) and iridium compounds were obtained.
Abstract: Experimental data on the saturated vapor pressure and melting of dicarbonyl(hexafluoroacetylacetonato)iridium [Ir(CO)2(hfac)] were obtained. Thermodynamic characteristics of its melting and sublimation were calculated. A unified processing of p‒T dependences, the reduction of sublimation parameters to the standard temperature, and the thermodynamic modeling of the composition of condensed phases in the precursor‒gas‒ reagent system were carried out for three iridium(I) compounds: [Ir(CO)2(hfac)], [Ir(CO)2(acac)], and [Ir(cod)(hfac)] (acac– = acetylacetonate ion, cod = cyclooctadiene-1,3). The results form the basis for selection of a precursor and determination of the optimal deposition conditions for iridium(I)-based coatings.

3 citations

References
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Journal ArticleDOI
TL;DR: Basic electromigration physics is reviewed in which the main differences between Al- and Cu-based interconnects relevant to electromigration are covered and the methodology of electromigration lifetime extrapolation, including reliability assessments of more complex interconnect geometries, is covered.

193 citations

Journal ArticleDOI
TL;DR: In this paper, a brief review of the fundamental aspects underlying galvanic displacement processes on semiconductor surfaces is presented, including applications to micro and nanoscale devices, including schemes developed for the metallization and nanopatterning of semiconductor substrates with high selectivity and with optimal interfacial properties.

159 citations

Journal ArticleDOI
TL;DR: In this article, the molecular design of a number of new oxide precursors is described, illustrating how the replacement of simple alkoxide groups by other groups, such as donor-functionalised alkoxide or β-diketonate ligands, can result in a precursor with improved physical properties and enhanced MOCVD performance.
Abstract: Metalorganic chemical vapour deposition (MOCVD) is a highly promising technique for the deposition of dielectric and ferroelectric oxide thin films such as TiO2, ZrO2, HfO2, Pb(Zr,Ti)O3, SrBi2Ta2O9 and Pb(Sc0.5Ta0.5)O3 which have a variety of applications in electronic devices. A key requirement in this technology is the availability of precursors with appropriate physical properties and decomposition characteristics, but there are problems associated with many of the existing precursors. Therefore, in order to exploit the full potential of MOCVD it is sometimes necessary to “tailor” the properties of the precursor in order to optimise process parameters such as evaporation temperature, deposition temperature, layer purity and uniformity. In this paper the molecular design of a number of new oxide precursors is described, illustrating how the replacement of simple alkoxide groups by other groups, such as donor-functionalised alkoxide or β-diketonate ligands, can result in precursors with improved physical properties and enhanced MOCVD performance.

148 citations

Journal ArticleDOI
TL;DR: In this article, a new class of volatile precursors for chemical vapour deposition (CVD) of metallic layers is described, which can be divided into three types: inorganic, coordination and organometallic.

131 citations

Journal ArticleDOI
TL;DR: A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 degrees C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH(2)NMe(2))(2)] with Et( 2)Zn (see scheme).
Abstract: A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100–120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.

95 citations