Journal ArticleDOI
Development and vapour pressure of metallo-organic precursors of copper for the deposition of copper thin films by a plasma-assisted MOCVD
M. G. Johnson,S. Raj Bharath,S. Arockiasamy,Thandavarayan Maiyalagan,J. Selvakumar,K.S. Nagaraja +5 more
TLDR
A group of metallo-organic complexes of copper, namely bis(N-R-salicylaldiminato)Cu(II) (R: methyl to n-pentyl, hereafter referred to as 1-5) were prepared and their volatile nature was confirmed by TG/DTA as discussed by the authors.Abstract:
A group of metallo-organic complexes of copper, namely bis(N-R-salicylaldiminato)Cu(II) (R: methyl to n-pentyl, hereafter referred to as 1–5) were prepared and their volatile nature was confirmed by TG/DTA. The molecular masses (M) of 1–5 were confirmed by mass spectrometry. The vapour pressure (pe) for precursors 1–5 determined by a transpiration technique using the Clausius–Clapeyron relation yielded the values of 91 ± 2, 84 ± 4, 100 ± 2, 92 ± 2, and 72 ± 2 kJ mol−1 for ΔHovap, respectively, for 1–5. The thin films deposited by plasma-assisted MOCVD technique contain predominantly metallic copper in orientation. The SEM images of the thin films exhibit continuous nanoball-like structure.read more
Citations
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Thermodynamic Study of Iridium(I) Complexes as a Basis for Chemical Gas-Phase Deposition Technology
K. V. Zherikova,A. M. Makarenko,K. I. Karakovskaya,Ludmila N. Zelenina,Sergey V. Sysoev,E. S. Vikulova,Natalya B. Morozova +6 more
TL;DR: In this article, experimental data on the saturated vapor pressure and melting of DICBonyl (hexafluoroacetylacetonato) and iridium compounds were obtained.
References
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An introduction to Cu electromigration
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Metallization and nanostructuring of semiconductor surfaces by galvanic displacement processes
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Molecular design of improved precursors for the MOCVD of electroceramic oxides
TL;DR: In this article, the molecular design of a number of new oxide precursors is described, illustrating how the replacement of simple alkoxide groups by other groups, such as donor-functionalised alkoxide or β-diketonate ligands, can result in a precursor with improved physical properties and enhanced MOCVD performance.
Journal ArticleDOI
Copper(I), silver(I) and gold(I) carboxylate complexes as precursors in chemical vapour deposition of thin metallic films
TL;DR: In this article, a new class of volatile precursors for chemical vapour deposition (CVD) of metallic layers is described, which can be divided into three types: inorganic, coordination and organometallic.
Journal ArticleDOI
Low-temperature atomic layer deposition of copper metal thin films: self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc.
Byoung Hun Lee,Jae K. Hwang,Jae W. Nam,Song U. Lee,Jun T. Kim,Sang M. Koo,Arne Baunemann,Roland A. Fischer,Myung Mo Sung +8 more
TL;DR: A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 degrees C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH(2)NMe(2))(2)] with Et( 2)Zn (see scheme).