Patent
Double patterning etching process
TLDR
In this article, a method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride.Abstract:
A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride The substrate having the double patterning features is provided to a process zone An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate The solid residue is sublimated by heating the substrate to a temperature of at least about 100° Cread more
Citations
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Patent
Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
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Lucian Jdira,Herbert Terhorst,Michael W. Halpin,Carl White,Todd Dunn,Eric Shero,Melvin Verbass,Christopher Wuester,Kyle Fondurulia +8 more
TL;DR: In this paper, a gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas-inlet port of the Wafer Processing Reactor.
References
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Patent
Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
TL;DR: In this paper, a method of forming a dielectric material in a substrate gap using a high-density plasma is described, which may include depositing a first portion of the material into the gap with the high density plasma.
Patent
Removal of surface dopants from a substrate
Kartik Ramaswamy,Kenneth S. Collins,Biagio Gallo,Hiroji Hanawa,Majeed A. Foad,Martin A Hirsekorn,Kartik Santhanam,Matthew D. Scotney-Castle +7 more
TL;DR: In this article, a method and apparatus for removing excess dopant from a doped substrate is provided, where a reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopants adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds.
Patent
Semiconductor device and method of manufacturing the same
Rittaku Satoshi,Shimizu Kazuhiro +1 more
TL;DR: In this article, a semiconductor device including a high voltage element and a low voltage element, including: a low-voltage element, is considered, where the LOCOS isolation structure includes a LOCOS oxide film formed on a surface of the semiconductor substrate.
Patent
Smooth siconi etch for silicon-containing films
TL;DR: In this article, a SiConi etch with a greater or lesser flow ratio of hydrogen compared to fluorine was proposed to reduce roughness of the post-etch surface and to reduce the difference in etch rate between densely and sparsely patterned areas.
Patent
Methods of thin film process
Nitin K. Ingle,Jing Tang,Yi Zheng,Zheng Yuan,Zhenbin Ge,Xinliang Lu,Chien-Teh Kao,Vikash Banthia,William H. McClintock,Mei Chang +9 more
TL;DR: In this article, a plurality of features across a surface of a substrate, with at least one space being between two adjacent features, is formed on the features and within the at least 1 space.