Proceedings ArticleDOI
Driving level dependence of spontaneous emission factor in microcavity DBR surface emitting lasers
T. Hamano,Toshihiko Baba,Kenichi Iga +2 more
- pp 570-571
TLDR
In this article, the spontaneous emission factor (C factor) of a three-dimensional microcavity DBR SE laser has been obtained and it has been shown that the variable C factor provides a substantial difference in the L-I characteristic of a micro-avity SE laser.Abstract:
Ultra low-threshold surface emitting (SE) lasers are attractive for large scale integration scheme into two-dimensional laser arrays. The control of spontaneous emission using a microcavity is one of the viable methods to realize such ultra low-threshold lasers. We have obtained the enhanced spontaneous emission factor (C factor) in three-dimensional microcavity DBR SE lasers. Recently, several groups have estimated the C factor of the microcavity SE lasers by fitting the calculated threshold curves of output-input characteristics where they assumed that the C factor was constant. However, the C factor must be changing against driving levels. In this study, we would like to show that the variable C factor provides the substantial difference in the L-I characteristic of a microcavity SE laser. >read more
References
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Journal ArticleDOI
Spontaneous emission factor of a microcavity DBR surface-emitting laser
TL;DR: In this article, the spontaneous emission factor (SEF) of a microcavity distributed Bragg reflector (DBR) surface-emitting laser has been obtained theoretically to investigate the possibility of the thresholdless lasing operation.
Journal ArticleDOI
Spontaneous emission factor of a microcavity DBR surface emitting laser. II. Effects of electron quantum confinements
TL;DR: In this paper, a method for the theoretical analysis of the spontaneous emission factor (C factor) has been developed for microcavity distributed Bragg reflector (DBR) surface emitting lasers having various quantum-well active regions.
Journal ArticleDOI
Low‐threshold operation of hemispherical microcavity single‐quantum‐well lasers at 4 K
Franklin M. Matinaga,Anders Karlsson,Susumu Machida,Yoshihisa Yamamoto,T. Suzuki,Y. Kadota,M. Ikeda +6 more
TL;DR: In this paper, the authors demonstrate low-threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As singlequantum-well microcavities.