scispace - formally typeset
Proceedings ArticleDOI

Driving level dependence of spontaneous emission factor in microcavity DBR surface emitting lasers

TLDR
In this article, the spontaneous emission factor (C factor) of a three-dimensional microcavity DBR SE laser has been obtained and it has been shown that the variable C factor provides a substantial difference in the L-I characteristic of a micro-avity SE laser.
Abstract
Ultra low-threshold surface emitting (SE) lasers are attractive for large scale integration scheme into two-dimensional laser arrays. The control of spontaneous emission using a microcavity is one of the viable methods to realize such ultra low-threshold lasers. We have obtained the enhanced spontaneous emission factor (C factor) in three-dimensional microcavity DBR SE lasers. Recently, several groups have estimated the C factor of the microcavity SE lasers by fitting the calculated threshold curves of output-input characteristics where they assumed that the C factor was constant. However, the C factor must be changing against driving levels. In this study, we would like to show that the variable C factor provides the substantial difference in the L-I characteristic of a microcavity SE laser. >

read more

References
More filters
Journal ArticleDOI

Spontaneous emission factor of a microcavity DBR surface-emitting laser

TL;DR: In this article, the spontaneous emission factor (SEF) of a microcavity distributed Bragg reflector (DBR) surface-emitting laser has been obtained theoretically to investigate the possibility of the thresholdless lasing operation.
Journal ArticleDOI

Spontaneous emission factor of a microcavity DBR surface emitting laser. II. Effects of electron quantum confinements

TL;DR: In this paper, a method for the theoretical analysis of the spontaneous emission factor (C factor) has been developed for microcavity distributed Bragg reflector (DBR) surface emitting lasers having various quantum-well active regions.
Journal ArticleDOI

Low‐threshold operation of hemispherical microcavity single‐quantum‐well lasers at 4 K

TL;DR: In this paper, the authors demonstrate low-threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As singlequantum-well microcavities.
Related Papers (5)