Journal ArticleDOI
Effect of doping concentration on UV accelerated chemically deposited ZnS:Mn thin films
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TLDR
In this article, the influence of doping concentration on ZnS thin films was investigated through the structural, compositional, morphological, optical and luminescent studies, which revealed the formation of crystalline films with hexagonal structure.Abstract:
Pure and Mn alloyed ZnS thin films have been prepared by UV accelerated chemical deposition technique which is simple, economic and easy to monitor. Influence of doping concentration on ZnS thin films was investigated through the structural, compositional, morphological, optical and luminescent studies. The XRD studies confirmed the formation of crystalline films with hexagonal structure. In doped samples the intensities of the prominent peaks increased up to 0.5 wt% Mn and then decreased. The optimum concentration means the amount required to get most suitable characteristics for photovoltaic application. The thickness of the films and the sizes of the crystallites varied in consistent with the structural results. Crystallites became larger in size on doping and appeared to be denser than undoped film. Various structural parameters like stress and micro strain were calculated. The observed strain is compressive in nature which rapidly increased with doping and then remained almost same with doping concentration. The SEM studies revealed the formation of films with almost similar morphology of spherical architectures. All the films exhibited uniform transmission in the high visible region, with a maximum of 80 % for the sample with optimum Mn concentration. Both direct and indirect band gap decreased due to the incorporation of Mn, but showed a blue shift in the fundamental absorption edge with doping concentration up to the optimum dopant content. Undoped and doped films exhibit five distinct luminescence peaks located around 391, 451, 458, 482 and 492 nm. The observed variation in the intensity of the luminescence in doped films clearly indicated the influence of thickness of the films which varied on doping.read more
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Effect of deposition temperature on structural and optical properties of chemically grown nanocrystalline Ni doped ZnS thin films
TL;DR: In this article, the effect of deposition temperature on the average crystal size, lattice constant and lattice strain, optical, and photoluminescence properties of the ZnS:Ni thin films with high purity in composition and crystallographic sense was discussed.
Journal ArticleDOI
Preparation and characterization of ZnS nanocrystalline thin films by low cost dip technique
TL;DR: In this article, X-ray diffraction analysis performed the ZnS cubic phase in the reaction temperatures in the range 473-593 K and above 593 K mixed cubic and hexagonal crystallographic phases have been resolved.
Journal ArticleDOI
Study of optical properties of ZnS and MnZnS (ZnS/MnS) nanostructure thin films; Prepared by microwave-assisted chemical bath deposition method
TL;DR: In this article , a microwave assisted chemical bath deposition (MA-CBD) method was used for the preparation of ZnS and MnZnS nanostructure thin films in an ammonia-free solution.
Journal ArticleDOI
Study of optical properties of ZnS and MnZnS (ZnS/MnS) nanostructure thin films; Prepared by microwave-assisted chemical bath deposition method
TL;DR: In this article, a microwave assisted chemical bath deposition (MA-CBD) method was used for the preparation of ZnS and MnZnS nanostructure thin films in an ammonia-free solution.
References
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Journal ArticleDOI
Optical properties of manganese-doped nanocrystals of ZnS.
TL;DR: Luminescent measurements show that the efficiency increases with decreasing size of the particles, as expected within the framework of an electron-hole localization theory, suggesting that doped nanocrystals are indeed a new class of materials heretofore unknown.
Journal ArticleDOI
A simple model for the ionization potential, electron affinity, and aqueous redox potentials of small semiconductor crystallites
TL;DR: In this article, the photochemical redox potential of one carrier, as a function of the size of the crystal, has been studied in the case of a small number of electrons.
A simple model for the ionization potential, electron affinity, and aqueous redox potentials of small semiconductor crystallites
Abstract: Large semiconductor crystals have intrinsic electronic properties dependent upon the bulk band structure. As the crystal becomes small, a new regime is entered in which the electronic properties (excited states, ionization potential, electron affinity) should be strongly dependent upon the electron and hole in a confined space. We address the possibility of a shift in the photochemical redox potential of one carrier, as a function of crystallite size. As a semiquantitative guide, one might expect a shift on the order of h2/8em*R2 due to the kinetic energy of localization in the small crystallite. We model the elementary quantum mechanics of a charged crystallite using (a) the effective mass approximation, (b) an electrostatic potential for dielectric polarization, and (c) penetration of the carrier outside the crystallite in a cases of small effective mass. Shifts of several tenths of an eV appear possible in crystallites of diameter 50 A. The carrier charge density reside near the crystallite surface if ...
Journal ArticleDOI
Quantum crystallites and nonlinear optics
TL;DR: In this paper, a review and analysis of the optical properties of quantum crystallites, with principal emphasis on the electro-optic Stark effect and all optical third order nonlinearity is presented.
Journal ArticleDOI
Long-lived Mn 2 + emission in nanocrystalline Z n S : M n 2 +
Ageeth A. Bol,Andries Meijerink +1 more
TL;DR: In this article, the authors conclude that doped semiconductor nanoparticles do not form a new class of luminescent materials, combining a high efficiency with a short (ns) decay time.