Journal ArticleDOI
Effects of annealing on the carrier concentration of heavily Si-doped GaAs
J. K. Kung,W. G. Spitzer +1 more
TLDR
In this paper, isothermal and isochronal annealing measurements were performed on heavily Si-doped GaAs and infrared reflectivity measurements were used to determine the free-carrier concentration after each GaAs stage.Abstract:
Isothermal and isochronal annealing measurements were performed on heavily Si‐doped GaAs. Infrared reflectivity measurements were used to determine the free‐carrier concentration after each annealing stage. A factor of [inverted lazy s]5 decrease in free‐carrier concentration was observed as a result of annealing at temperatures as low as 400°C. This annealing effect can be important when fabricating devices using GaAs: Si. Possible explanations of this effect are discussed.read more
Citations
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Journal ArticleDOI
Nano-scale properties of defects in compound semiconductor surfaces
TL;DR: In this article, the atomic-scale properties of point defects and dopant atoms exposed on and in cleavage surfaces of III-V and II-VI semiconductors are reviewed.
Journal ArticleDOI
A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide
TL;DR: A detailed analysis of the role of charged native point defects in controlling the solubility of electrically active dopants in gallium arsenide is presented in this article, where an equilibrium thermodynamic model based on these concepts is shown to accurately describe the doping behavior of Te, Zn, Sn, Ge, Si, and C and the formation and annealing of the deep level denoted EL2 (assumed to be the arsenic antisite defect AsGa).
Journal ArticleDOI
The lattice locations of silicon impurities in GaAs: effects due to stoichiometry, the Fermi energy, the solubility limit and DX behaviour
TL;DR: In this article, an outline of infrared localized vibrational mode absorption spectroscopy relevant to silicon impurities in GaAs is presented, which is related to the electrical properties of n-type Bridgman, liquid-encapsulated Czochralski and molecular beam epitaxial (MBE) (001) GaAs.
Journal ArticleDOI
Si‐defect concentrations in heavily Si‐doped GaAs: Changes induced by annealing
J. K. Kung,W. G. Spitzer +1 more
TL;DR: In this paper, annealing effects on the carrier density and free carrier absorption are correlated with photoluminescence and localized vibrational mode infrared absorption measurements of annealed samples of heavily doped GaAs: Si.
Journal ArticleDOI
Indium oxide: A transparent, conducting ferromagnetic semiconductor for spintronic applications
TL;DR: In this paper, the authors have identified best chemical composition, geometry and synthesis protocols for strongest ferromagnetic strength and suitable theoretical model of magnetism has been presented in this review.
References
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Journal ArticleDOI
Infrared Absorption and Electron Effective Mass in n-Type Gallium Arsenide
W. G. Spitzer,J. M. Whelan +1 more
TL;DR: In this paper, the infrared reflectivity measurements on several samples of different carrier concentrations were used to deduce the free-carrier contribution to the electric susceptibility and the electron effective mass.
Journal ArticleDOI
Ohmic Contacts to Solution‐Grown Gallium Arsenide
TL;DR: Carrier concentration profiles and surface resistance of Ohmic contacts to solution epitaxial n-type GaAs wafers measured by Schottky barrier capacitance are given in this article.
Book
Effect of arsenic pressure on heat treatment of liquid epitaxial GaAs
E. Mũnoz,W. L. Snyder,J. L. Moll +2 more
TL;DR: In this article, short-time heat treatments in a H2 flow, and under an As vapor, have been performed on n-type and p-type GaAs crystals, and the changes in carrier concentration as function of As vapor pressure showed the acceptors to be associated with As vacancies.
Journal ArticleDOI
Local‐Mode Absorption and Defects in Compensated Silicon‐Doped Gallium Arsenide
W. G. Spitzer,W. Allred +1 more
TL;DR: In this article, the authors extend previous work to show that all the observed bands (frequencies given in parentheses) are explicable in terms of the presence of the following defects: SiGa (384 cm−1), SiAs (399 cm− 1), SiGa•LiGa (374, 379, 405, 470, 480, 487 cm−
Related Papers (5)
Si‐defect concentrations in heavily Si‐doped GaAs: Changes induced by annealing
J. K. Kung,W. G. Spitzer +1 more
Local‐Mode Absorption and Defects in Compensated Silicon‐Doped Gallium Arsenide
W. G. Spitzer,W. Allred +1 more