Journal ArticleDOI
Effects of Neutron Irradiation on the Optical Properties of Thin Films and Bulk GaAs and GaP
Titus Pankey,John E. Davey +1 more
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In this paper, the effect on the optical absorption edge and free carrier region of GaAs and GaP thin film and bulk samples have been irradiated with neutron fluences of 1018 nvt.Abstract:
GaAs and GaP thin film and bulk samples have been irradiated with neutron fluences of 1018 nvt and the effect on the optical absorption edge and free carrier region determined. In the case of both GaAs and GaP films, which exhibit bulk or near bulk optical properties before irradiation, large optical absorption edge shifts of ∼0.3 and ∼1.5 eV, respectively, are caused by the neutron bombardment. These optical absorption edge shifts can be ``annealed out'' by high‐temperature vacuum annealing; in the case of the GaAs films, isochronal annealing points to a Frenkel‐pair annihilation mechanism. Bulk samples of GaAs and GaP, similarly irradiated, exhibit smaller optical edge shifts than the films with substantially different quantitative behavior. High‐temperature vacuum annealing of the bulk samples also results in a recovery of normal optical properties.read more
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Optical Effects of Ion Implantation
TL;DR: In this article, the optical properties of implanted semiconductors, electrooptic components formed by ion implantation, general principles that determine most luminescent systems, effects of implantation temperature, luminescence centers in LiF-Mg-Ti radiation dosimeters, and use of line spectra in defect studies.
Journal ArticleDOI
The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenide
R. Coates,E.W.J. Mitchell +1 more
TL;DR: In this paper, the authors studied the effect of fast neutron irradiation on gallium arsenide and showed that the electrical resistivity increases with dose at low doses to semi-insulating values, showing a remarkable, specimen-independent decrease for doses greater than 1017 n cm-2.
Journal ArticleDOI
Optical and channeling studies of ion‐bombarded GaP
TL;DR: In this paper, below-gap optical absorption, above-gap reflectivity, photoluminescence, and He ion channeling backscattering measurements are reported for ion-bombarded GaP.
Journal ArticleDOI
Effect of irradiation-induced disorder on the optical absorption spectra of CdS thin films
TL;DR: In this article, the optical band gap was found to reduce with the increase in the irradiation dose, accompanied by a progressive reduction in the sharpness of the absorption band edge.
References
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Journal ArticleDOI
Band Structure of the Intermetallic Semiconductors from Pressure Experiments
TL;DR: In this paper, the authors considered three types of conduction band extrema in the (000), (100), and (111) directions in k space, and the correlation of unique pressure coefficients with specific band edges was examined, showing that pressure experiments can be planned to show up details of the band structure unavailable for study at atmospheric pressure.
Journal ArticleDOI
Infrared Lattice Absorption of GaP
D. A. Kleinman,W. G. Spitzer +1 more
TL;DR: In this article, transmission and reflectivity measurements on GaP in the wavelength region 1 to 40 have been analyzed to obtain information on the lattice vibrations, and the principal mechanism for the combination bands is the anharmonic potential energy.
Journal ArticleDOI
Optical absorption in n-type gallium phosphide
Journal ArticleDOI
Structural and Optical Characteristics of Thin GaAs Films
John E. Davey,Titus Pankey +1 more
TL;DR: Free carrier absorption measurements have been carried out on GaAs films which exhibit an absorption edge shift to lower energies; acceptor concentrations of >1019/cm3 are associated with this shift and causally related to it according to a model proposed by Stern as mentioned in this paper.
Journal ArticleDOI
Structural and Optical Evaluation of Vacuum‐Deposited GaP Films
John E. Davey,Titus Pankey +1 more
TL;DR: In this paper, the amorphous-crystalline transition occurs for a substrate temperature Ts of about 240°C and becomes transparent-yellow for Ts≥425°C.
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