Journal ArticleDOI
Electron-beam assisted adsorption on the Si(111) surface
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TLDR
In this article, it was shown that the beam-assisted adsorption of carbon monoxide on clean and dirty silicon carbide particles can account for part of the greater accumulation of carbon on dirty silicon compared with that on clean silicon.About:
This article is published in Surface Science.The article was published on 1970-07-01. It has received 106 citations till now. The article focuses on the topics: Silicon & Monocrystalline silicon.read more
Citations
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Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air
TL;DR: In this paper, the chemical modification of hydrogen-passivated n-Si surfaces by a scanning tunneling microscope (STM) operating in air is reported, and the modified surface regions have been characterized by STM spectroscopy, scanning electron microscopy (SEM), time-of-flight secondary ion mass spectrometry (TOF SIMS), and chemical etch/Nomarski microscopy.
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The structure and properties of metal-semiconductor interfaces
TL;DR: In this article, the contributions of surface science research to the understanding of metal-semiconductor interfaces are surveyed and a wide range of ultra-high vacuum techniques now available for probing metal-semiconductor interfaces on an atomic scale, and assess the current state of knowledge of the chemical, geometrical, and electronic structures of MSS interfaces.
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Electron beam damage in Auger electron spectroscopy
C.G. Pantano,Theodore E. Madey +1 more
TL;DR: In this paper, the damaging effects of electronic excitation, charging and beam heating during Auger electron spectroscopy (AES) were treated and a damage threshold was derived and related to experimental parameters.
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A study of the charging and dissociation of SiO2 Surfaces by AES
B Carrière,B Lang +1 more
TL;DR: In this article, an initial spectrum of a vacuum-broken SiO 2 surface is used to determine the initial spectrum and to follow its dissociation under the electron beam probe, and the reduction of SiO2 is characterized in terms of irradiation dose, dissociation cross-section and electron impact efficiency.
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Quantitative aspects of Auger electron spectroscopy
F. Meyer,J.J. Vrakking +1 more
TL;DR: In this paper, the Auger electron yields of six elements, namely C, N, O, P, S and Cl have been calibrated by combining Auger Electron Spectroscopy with the quantitative technique of ellipsometry.
References
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Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon
R. E. Schlier,H. E. Farnsworth +1 more
TL;DR: In this paper, the surface structures of clean (100) and (110) germanium surfaces were observed and the results indicated that these structures were not due to contamination but to the silicon itself.
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Auger Electron Spectroscopy of fcc Metal Surfaces
P. W. Palmberg,T. N. Rhodin +1 more
TL;DR: In this article, the energy spectra of Auger electrons from clean Au, Ag, Cu, Pd, and Ni surfaces have been determined, and the mean escape depth for Ag (without significant loss of energy) varies between 4 and 8 A for energies of 72 and 362 eV, respectively.
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Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon
J. J. Lander,J. Morrison +1 more
TL;DR: In this article, low voltage electron diffraction and pumping speed measurements have been used to study the reactions of oxygen with clean Si (111) and (100) surfaces in the temperature range between 600° and 1000°C and the oxygen pressure range between 7×10−9 and 1 ×10−4 mm Hg.
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Estimates of the Efficiencies of Production and Detection of Electron-Excited Auger Emission
H. E. Bishop,J. C. Rivière +1 more
TL;DR: In this article, the efficiency of production of electrons emitted by the Auger process from the surface of a solid irradiated with a beam of electrons in the energy region below 2 keV is estimated.
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Measurement of oxygen adsorption on silicon by ellipsometry
R.J. Archer,G.W. Gobeli +1 more
TL;DR: In this article, the adsorption of oxygen on freshly cleaved (111) faces of silicon was studied by the technique of ellipsometry and a precision of ± 0.02 monolayers was achieved.