Journal ArticleDOI
Electron‐trapping characteristics of W in SiO2
Reads0
Chats0
TLDR
In this paper, the electron-trapping characteristics of W in SiO2 have been studied using evaporated and ion-implanted W. The results indicate a trapping cross section varying from 1.56×10−14 to 4.62× 10−14 cm2 depending on the evaporation time.Abstract:
The electron‐trapping characteristics of W in SiO2 have been studied using evaporated and ion‐implanted W. The evaporated W results indicate a trapping cross section varying from 1.56×10−14 to 4.62×10−14 cm2 depending on the evaporation time. The cross section of the implanted W is 1.06×10−15 cm2. Thermal‐detrapping measurements indicate an activation energy of 0.9 eV, whereas optical detrapping is not observed for light energies up to 6 eV. It is not understood why there is this large discrepancy of results. It is also interesting to note that Powell and Beairsto measured a barrier height of 3.6 eV for the W‐SiO2 interface.read more
Citations
More filters
Journal ArticleDOI
Effects of avalanche injection of electrons into silicon dioxide—generation of fast and slow interface states
S. K. Lai,D. R. Young +1 more
TL;DR: In this article, it is shown that the slow states can be discharged when heated under +5 V or higher biases at 160°C or above, and the fast states are also annealed in the process, and enhanced by a positive bias.
Journal ArticleDOI
High current injection into SiO2 from Si rich SiO2 films and experimental applications
D. J. DiMaria,D. W. Dong +1 more
TL;DR: In this article, the dependence of this injection mechanism on the Si rich SiO2 composition and thickness, temperature, capacitor area, annealing conditions, gate metal (Al or Au), and underlying SiO 2 thickness is described.
Book ChapterDOI
The properties of electron and hole traps in thermal silicon dioxide layers grown on silicon
TL;DR: In this article, the location of trapped electrons and holes in thermal silicon dioxide layers grown on silicon is discussed in various conditions (for instance, steam versus dry oxidation) and in oxides where impurites have been added by ion implantation or grown into the film at elevated temperatures.
Journal ArticleDOI
Charge trapping studies in SiO2 using high current injection from Si‐rich SiO2 films
D. J. DiMaria,R. Ghez,D. W. Dong +2 more
TL;DR: In this paper, the trap distribution centroid and the number of trapped charges were derived from the position and extent of current ledges observed in dark current as a function of ramped gate voltage.
Journal ArticleDOI
Electron trapping and detrapping characteristics of arsenic‐implanted SiO2 layers
TL;DR: In this article, the authors investigated the electron trapping and detrapping properties of As+−implanted thermally grown SiO2 layers incorporated into metal silicon dioxide-silicon (MOS) structures, where the samples were charged using avalanche injection from the silicon substrate or internal photoemission from either interface.
References
More filters
Journal ArticleDOI
Determination of insulator bulk trapped charge densities and centroids from photocurrent‐voltage charactersitcs of MOS structures
TL;DR: In this article, a new rapid technique for determining the density and centroid of trapped space charge in MOS structures is described, which is compared to others in terms of its direct, rapid, minimally perturbing, low-current and low-field characteristics.
Journal ArticleDOI
AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2
TL;DR: In this paper, electron injection from p type silicon and hole injection from n type silicon by hot carrier emission have been observed to achieve average electron current densities as high as 10−2 A/cm2.
Journal ArticleDOI
Electron trapping by radiation‐induced charge in MOS devices
J. M. Aitken,D. R. Young +1 more
TL;DR: In this paper, the avalanche injection technique was used to construct five electron traps with cross sections ranging from 10−13 to 10−19 cm2 and the majority of the positive charge centers were associated with positive or neutral centers in the oxide.
Journal ArticleDOI
Avalanche Injection of Electrons into Insulating SiO2 Using MOS Structures
E. H. Nicollian,C. N. Berglund +1 more
TL;DR: In this paper, a model to explain the direct current which flows when a metal-SiO2-Si (MOS) capacitor is driven by a large-amplitude ac signal sufficient to produce avalanche breakdown in the silicon is presented.
Journal ArticleDOI
Contact currents in silicon nitride
P. C. Arnett,D. J. DiMaria +1 more
TL;DR: In this paper, Fowler-Nordheim analysis of the contact characteristics assuming 2 −eV barrier heights as determined by internal photoemission indicated low effective masses of 0.05 −0.13m0 for electrons and 0.005m 0 for holes.