Journal ArticleDOI
Electronic structure of localized Si dangling-bond defects by tunneling spectroscopy.
Robert J. Hamers,J. E. Demuth +1 more
TLDR
Scanning tunneling microscopy is used to determine the atomic structure, charge state, and electronic energy spectrum of isolated Si dangling-bond defects at the Al/Si(111) surface.Abstract:
Scanning tunneling microscopy is used to determine the atomic structure, charge state, and electronic energy spectrum of isolated Si dangling-bond defects at the Al/Si(111) surface. Si adatoms substituting for Al in the first atomic layer give rise to a dangling-bond defect state near —0.4 eV which is strongly localized in space. Tunneling spectra and local band-bending measurements are inconsistent with simple one-electron band theory and demonstrate the importance of many-electron effects.read more
Citations
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Nanostructured surfaces: challenges and frontiers in nanotechnology
TL;DR: Nanostructured surfaces can be broadly defined as substrates in which the typical features have dimensions in the range 1?100?nm (although the upper limit of 100?nm may be relaxed to greater sizes in some cases, depending on the material and the specific property being investigated) as mentioned in this paper.
Journal ArticleDOI
Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices
In-Whan Lyo,Phaedon Avouris +1 more
TL;DR: scanning tunneling microscopy and scanning tunneling spectroscopy are shown that the current-voltage characteristics of a diode configuration consisting of an STM tip over specific sites of a boron-exposed silicon(111) surface exhibit NDR.
Journal ArticleDOI
Chemical identification and manipulation of molecules by vibrational excitation via inelastic tunneling process with scanning tunneling microscopy
TL;DR: In this paper, inelastic tunneling spectroscopy (IETS) was used for chemical analysis of a single molecule and manipulation of a molecule with controlled excitation of their vibration modes.
Book
Nanoscale Characterization of Surfaces and Interfaces
TL;DR: In this article, a spin-off of scanning tunneling microscopy (STM) is used to manipulate atom and atom clusters on the nanoscale spin-offs of STM: non-contact Nanoscale Probes.
Journal ArticleDOI
Identifying reactive intermediates in the Ullmann coupling reaction by scanning tunneling microscopy and spectroscopy
Meaghan M. Blake,Sanjini U. Nanayakkara,Shelley A. Claridge,Luis C. Fernández-Torres,E. Charles H. Sykes,Paul S. Weiss +5 more
TL;DR: It is inferred that the surface normal component of the dipole moment is important in determining the transition strength in inelastic electron tunneling spectroscopy.
References
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Journal ArticleDOI
Electron correlations in narrow energy bands
TL;DR: In this paper, the Hartree-Fock approximation of the correlation problem for the d-and f-bands was applied to a simple, approximate model for the interaction of electrons in narrow energy bands.
Book
Metal-insulator transitions
TL;DR: In this article, a discussion is given of some aspects of the metal insulator transition and the status of the "minimum metallic conductivity" is discussed, and the concept is valid for liquids and in some, but not all, solid systems.
Journal ArticleDOI
Surface electronic structure of Si(111)-(7x7) resolved in real space.
Journal ArticleDOI
Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
Journal ArticleDOI
Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy
Abstract: The tunneling current is measured as a function of voltage, lateral position, and vertical separation between a tungsten probe tip and a Si(111)2 \ifmmode\times\else\texttimes\fi{} 1 surface. A rich spectrum is obtained in the ratio of differential to total conductivity, revealing the structure of the surface-state bands. The magnitude of the parallel wave vector for certain surface states is determined from the decay length of the tunneling current. Real-space images of the surface states reveal a phase reversal between those states on either side of the surface-state band gap.
Related Papers (5)
Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction.
Surface electronic structure of Si(111)-(7x7) resolved in real space.
Atom-resolved surface chemistry using scanning tunneling microscopy.
Robert A. Wolkow,Phaedon Avouris +1 more