Journal ArticleDOI
Entirely diffused vertical channel jfet: theory and experiment
J.L. Morenza,D. Esteve +1 more
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In this article, the experimental properties of a vertical channel JFET fabricated by a double diffusion technique are presented, and a table showing its principal characteristics for different values of the diffusion depths is included.Abstract:
The experimental electrical properties of a vertical channel JFET fabricated by a double diffusion technique are presented. A table showing its principal characteristics for different values of the diffusion depths is included. The analysis of the “triode-like” operation revealed by the output characteristics is based on a two-dimensional numerical simulation of the device. At high drain currents ID is proportional to VDSα (α<1). This behaviour can be attributed mainly to the effect of channel length modulation by the drain voltage. At low drain currents, the potential barrier between the source and the drain determines the current magnitude. This is an exponential function of the barrier height which increases almost linearly when VGS increases and decreases non-linearly when VDS increases.read more
Citations
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Journal ArticleDOI
A first-order theory of the static induction transistor
C. Bulucea,A. Rusu +1 more
TL;DR: In this paper, a first-order theory of the static induction transistor (SIT) is proposed, which provides a unitary analytical description of its characteristics over the full range of normally encountered biasing conditions.
Journal ArticleDOI
High-voltage junction-gate field-effect transistor with recessed gates
TL;DR: In this article, a new recessed-gate structure for vertical channel junction field effect transistors (JFETs) is described together with a self-aligned gate-source process developed to fabricate these devices.
Journal ArticleDOI
A power junction gate field-effect transistor structure with high blocking gain
TL;DR: In this paper, a gate structure for vertical-channel power junction gate field effect transistors (FETs) is described, which has vertically walled gate regions extending perpendicular to the wafer surface.
Journal ArticleDOI
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs
TL;DR: In this paper, an original model of the potential barrier in the channel of bipolar static induction transistors (BSITs) is presented, which allows us to evaluate the barrier height for an arbitrary gate topology and to accurately predict the minority and majority carrier densities at the middle of the channel for a generic gate bias.
References
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Journal ArticleDOI
Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
Journal ArticleDOI
Field-effect transistor versus analog transistor (static induction transistor)
TL;DR: The Static Induction Transistor (SIT) as discussed by the authors is a transistor similar to that of the vacuum tube triode type that exhibits the nonsaturated build-up character only when the internal negative feedback action is as little as G{m'} \simeq G_{m}.
Journal ArticleDOI
Gridistor—A new field-effect device
S. Teszner,R. Gicquel +1 more
TL;DR: In this paper, the advantages of bipolar and field effect transistors have been combined in order to overcome the disadvantages of centripetal striction and have a multichannel structure.
Journal ArticleDOI
Ion-implanted FET for power applications
D.P. Lecrosnier,G.P. Pelous +1 more
TL;DR: In this paper, the gridistor is a multichannel FET with a p-type buried as gate, and the pattern sharpness is only limited by the definition of the mask.
Journal ArticleDOI
The “barrier mode” behaviour of a junction FET at low drain currents
TL;DR: In this paper, the behavior of a junction FET with a gate-source reverse bias exceeding the pinch-off voltage is discussed, and it is seen that both the transfer and output characteristics have an exponential character, and this is attributed to the presence of a potential barrier between the source and drain.
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