Patent
Ferroelectric memory device
S Wu,M Francombe +1 more
Reads0
Chats0
TLDR
In this article, a ferroelectric memory device utilizing the remanent polarization of a thin, active ferro-electric film was proposed to control the surface conductivity of a bulk semiconductor and perform the memory function.Abstract:
A ferroelectric memory device utilizing the remanent polarization of a thin, ferroelectric film to control the surface conductivity of a bulk semiconductor and perform the memory function. The structure of the device is similar to a conventional MIS field effect transistor with the exception that the gate insulating layer is replaced by a thin film of active ferroelectric material comprising a reversably polarizable dielectric exhibiting hysteresis.read more
Citations
More filters
Patent
Self restoring ferroelectric memory
TL;DR: In this article, a semiconductor memory with a ferroelec-tric capacitor having one plate coupled to a bit line by a FET and another plate coupled on a plate line is described.
Journal ArticleDOI
Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr 0.2 Ti 0.8)O3 films.
TL;DR: The present approach uses metal-ferroelectric-metal devices at room temperature and, therefore, significantly advances the use of ferro electric-based resistive switching.
Patent
Ferroelectric capacitor and memory cell including barrier and isolation layers
TL;DR: In this paper, a ferroelectric capacitor structure is designed for fabrication together with MOS devices on a semiconductor substrate, which includes a diffusion barrier layer above the surface of the substrate for preventing the materials of the capcacitor from contaminating the substrate or MOS device.
Patent
Ferroelectric thin film material, method of deposition, and devices using same
Donald R. Lampe,Samar Sinharoy,S. Y. Wu,H. Buhay,M. H. Francombe,S. Visvanathan Krishnaswamy +5 more
TL;DR: In this article, a polarizing thin film of BaMF4 on a substrate is described, and a nonvolatile NDRO and DRO memory cell and methods for depositing the thin film are described.
Patent
A ferroelectric dynamic random access memory
Tso-Ping Ma,Jin-Ping Han +1 more
TL;DR: In this paper, a memory including an array of memory cells (20), each of which includes a ferroelectric field effect transistor (FET) as its memory element, and sense and refresh circuitry (32) connected to the array memory cells to read stored data within each cell by sensing source-to-drain conductivity of the FET and to refresh the stored data.
References
More filters
Patent
Electronic memory circuit employing semiconductor memory elements and a method for writing to the memory element
TL;DR: In this article, a memory matrix in which a plurality of MIS transistors are arranged in a matrix array and have their gate and source-drain electrodes connected to row-and-column drive lines is described.