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Full 3D Quantum Transport Simulation of Interface Roughness in Nanowire FETs
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This article is published in Bulletin of the American Physical Society.The article was published on 2010-03-18 and is currently open access. It has received 1 citations till now. The article focuses on the topics: Nanowire.read more
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Proceedings ArticleDOI
Modeling of transport behavior of the ballistic Silicon nanowire gate-all-around field-effect-transistors (Si NWFETs) with Si/SiO 2 interface roughness
TL;DR: In this article, the contribution of gate oxide/channel interface roughness has been estimated and incorporated into the transport models of a Si nanowire field effect transistor (Si NWFET) by modifying the relevant energy subbands taking into account the roughness in both transverse and longitudinal directions.
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Proceedings ArticleDOI
Modeling of transport behavior of the ballistic Silicon nanowire gate-all-around field-effect-transistors (Si NWFETs) with Si/SiO 2 interface roughness
TL;DR: In this article, the contribution of gate oxide/channel interface roughness has been estimated and incorporated into the transport models of a Si nanowire field effect transistor (Si NWFET) by modifying the relevant energy subbands taking into account the roughness in both transverse and longitudinal directions.