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Abhijeet Paul
Researcher at GlobalFoundries
Publications - 59
Citations - 1085
Abhijeet Paul is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Nanowire & Phonon. The author has an hindex of 19, co-authored 59 publications receiving 1034 citations. Previous affiliations of Abhijeet Paul include Indian Institute of Technology Bombay & Inha University.
Papers
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Journal ArticleDOI
Bandstructure Effects in Silicon Nanowire Electron Transport
TL;DR: In this article, a 10-band sp3d5s* semi-empirical atomistic tight-binding model coupled to a self-consistent Poisson solver is used for the dispersion calculation.
Proceedings ArticleDOI
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI
Kang-ill Seo,Balasubramanian S. Pranatharthi Haran,Dinesh Gupta,Dechao Guo,Theodorus E. Standaert,Ruilong Xie,H. Shang,E. Alptekin,D.I. Bae,Geum-Jong Bae,Carol Boye,H. Cai,D. Chanemougame,Robin Chao,Kangguo Cheng,Jin Cho,Kisik Choi,B. Hamieh,J. G. Hong,Terence B. Hook,L. Jang,Ju-Hwan Jung,R. Jung,Deok-Hyung Lee,B. Lherron,R. Kambhampati,Bomsoo Kim,Hoon Kim,K. Kim,Tae-Chan Kim,S.-B. Ko,Fee Li Lie,Derrick Liu,H. Mallela,Erin Mclellan,Sanjay Mehta,P. Montanini,M. Mottura,J. Nam,S. Nam,F. Nelson,Injo Ok,Chanro Park,Young-Kwan Park,Abhijeet Paul,Christopher Prindle,Ravikumar Ramachandran,Muthumanickam Sankarapandian,V. Sardesai,Andreas Scholze,Soon-Cheon Seo,Jeffrey C. Shearer,Richard G. Southwick,Raghavasimhan Sreenivasan,S. Stieg,Jay W. Strane,Xiao Sun,Min Gyu Sung,Charan V. V. S. Surisetty,Gen Tsutsui,Neeraj Tripathi,Reinaldo A. Vega,Christopher J. Waskiewicz,M. Weybright,C.-C. Yeh,Huiming Bu,Sean D. Burns,Donald F. Canaperi,M. Celik,Matthew E. Colburn,Hemanth Jagannathan,S. Kanakasabaphthy,Walter Kleemeier,Lars W. Liebmann,D. McHerron,Philip J. Oldiges,Vamsi Paruchuri,Terry A. Spooner,James H. Stathis,R. Divakaruni,T. Gow,John Iacoponi,J. Jenq,R. Sampson,Mukesh Khare +84 more
TL;DR: A 10nm logic platform technology is presented for low power and high performance application with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrate.
Journal ArticleDOI
Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
TL;DR: In this paper, the influence of interface roughness scattering (IRS) on the performances of silicon nanowire (NW) field effect transistors is numerically investigated using a full 3D quantum transport simulator based on an atomistic sp3d5s* tight-binding model.
Journal ArticleDOI
Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires
TL;DR: In this article, a detailed description of the modified valence force field (MVFF) method to obtain the phonon dispersion in zinc-blende semiconductors is provided.
Journal ArticleDOI
Bandstructure Effects in Silicon Nanowire Hole Transport
TL;DR: In this paper, a 20-band sp3d5s* spin-orbit (SO) coupled atomistic tight-binding model coupled to a self-consistent Poisson solver is used for the valence-band dispersion calculation.