Journal ArticleDOI
Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors
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TLDR
In this paper, the Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metalorganic chemical vapor deposition were reported.Abstract:
There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio‐luminescent sources, and low noise blue‐green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n‐type GaP and a p+ over n junction grown by metal‐organic chemical vapor deposition. Both types of junctions show very low leakage currents and good efficiency for power conversion from low level beta particles, x rays, and blue‐green light.read more
Citations
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Journal ArticleDOI
Ultrafast Solar-Blind Ultraviolet Detection by Inorganic Perovskite CsPbX3 Quantum Dots Radial Junction Architecture.
Jiawen Lu,Xuexi Sheng,Guoqing Tong,Zhongwei Yu,Xiaolin Sun,Linwei Yu,Xiangxing Xu,Junzhuan Wang,Jun Xu,Yi Shi,Kunji Chen +10 more
TL;DR: A new hybrid structure that marries CsPbX3 IPQDs to silicon nanowires (SiNWs) radial junction structures to achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar-blind spectrum is reported, paving the way toward large area manufacturing of high performance Si-based perovskite UV detectors in a scalable and low-cost procedure.
Journal ArticleDOI
Semiconductor near-ultraviolet photoelectronics
TL;DR: In this article, a brief review of classification, application and sources of near-ultraviolet (UV) radiation the methods for fabricating UV photodetectors and characteristics of the photoconductive cells, p-n junction structure and Schottky barrier photodiodes are discussed.
Journal ArticleDOI
Semiconductor photoelectric converters for the ultraviolet region of the spectrum
T. V. Blank,Yu. A. Goldberg +1 more
TL;DR: In this paper, the parameters of starting wide gap semiconductors are given, physical foundations for photoelectric conversion and the principles of formation of ohmic contacts are described, characteristics of corresponding devices are given and the envisaged lines of further studies are outlined.
Journal ArticleDOI
PdIn contacts to n-type and p-type GaP
TL;DR: In this paper, PdIn was used as a contact material to n-type and p-type GaP contacts and the glancing angle x-ray diffraction was used to characterize the contacts.
Journal ArticleDOI
Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode
TL;DR: In this paper, the effect of 10-Mrad γ-ray exposure on the interface and transport properties of Au/n-GaP Schottky diode was studied in the 220-400-k temperature range.
References
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Book
Handbook of Optical Constants of Solids
TL;DR: In this paper, E.D. Palik and R.R. Potter, Basic Parameters for Measuring Optical Properties, and W.W.Hunter, Measurement of Optical Constants in the Vacuum Ultraviolet Spectral Region.
Journal ArticleDOI
Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors
TL;DR: In this article, the authors developed a simple phenomenological model capable of describing the present experimental situation from the standpoint of yield, variance, and bandgap dependence, based on the premise that e, the average amount of radiation energy consumed per pair, can be accounted for by a sum of three contributions: the intrinsic bandgap (EG), optical phonon losses r(ℏωR), and the residual kinetic energy (9/5) EG.