Journal ArticleDOI
Galvanomagnetic effects of hot electrons in n-type silicon
H. Heinrich,M. Kriechbaum +1 more
TLDR
In this article, the transverse magneto-resistance of n -Si in different crystallographic directions at 77°K and at field strengths up to 5 kV/cm was measured.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1970-05-01. It has received 18 citations till now. The article focuses on the topics: Magnetoresistance & Population.read more
Citations
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Journal ArticleDOI
A calculation of the phonon-drag contribution to the thermopower of quasi-2D electrons coupled to 3D phonons. II. Applications
D G Cantrell,P N Butcher +1 more
TL;DR: In this paper, a general formula for the phonon-drag contribution to the thermopower of quasi-2D electrons coupled to 3D phonons is evaluated for low temperatures when the electrons are in the electric quantum limit and the phonons are in a boundary scattering regime.
Journal ArticleDOI
Hot carriers in silicon surface inversion layers
Karl Hess,Chih-Tang Sah +1 more
TL;DR: In this article, the energy loss of the carriers to the lattice and the drift velocity or mobility are treated as two dimensional equations for both high and very low temperatures considering scattering by optical and acoustical phonons.
Journal ArticleDOI
Electron energy relaxation time in Si and Ge
TL;DR: The electron energy relaxation time τ ϵ has been analytically evaluated as a function of lattice temperature taking into account the electron-lattice scattering mechanisms for Si and Ge.
Book ChapterDOI
Phenomenological Physics of Hot Carriers in Semiconductors
TL;DR: In this paper, the authors present a review on the effects of hot electrons arising from drift, diffusion, and generation-recombination mechanisms in nonlinear transport and present a complete "recipe" on how hot carrier effects can be calculated within the carrier temperature model.
References
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Journal ArticleDOI
Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
Conyers Herring,Erich Vogt +1 more
TL;DR: In this article, a transport theory which allows for anisotropy in the scattering processes is developed for semiconductors with multiple nondegenerate band edge points, and the main effects of scattering on the distribution function over each ellipsoidal constant-energy surface can be described by a set of three relaxation times, one for each principal direction; these are the principal components of an energy-dependent relaxation-time tensor.
Journal ArticleDOI
Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium
TL;DR: In this paper, the indirect optical absorption edge in silicon and germanium has been studied in the presence of shear strain and the results have been interpreted in terms of changes in the valence and conduction-band structure with strain.
Journal ArticleDOI
XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductors
TL;DR: In this article, the problem of determining the time of relaxation due to scattering of electrons and holes by charged impurity donors and acceptors in semiconductors is reconsidered in an effort to derive formulae more exact and general than those due to Conwell, Weisskopf, and other authors.
Journal ArticleDOI
Dielectric Breakdown in Solids
Herbert Fröhlich,B V Paranjape +1 more
TL;DR: In this paper, it was shown that even at fairly low electronic densities (of the order 1014 cm-3) an electron exchanges energy with other electrons quicker than with lattice vibrations, mainly because collisions with the latter are nearly elastic.
Related Papers (5)
Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
Conyers Herring,Erich Vogt +1 more