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Heat Transfer Thermal Management Of Electronics
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Citations
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Journal ArticleDOI
Performance, limits and economic perspectives for passive cooling of High Concentrator Photovoltaics
TL;DR: In this article, the performance of the heat sinks has been related to the calculated energy yield of a standard triple-junction GaInP/GaAs/Ge HCPV cell in a system deployed at several suitable locations across the globe.
Journal ArticleDOI
Bulk Hexagonal Boron Nitride with a Quasi-Isotropic Thermal Conductivity
Srikanth Mateti,Keqin Yang,Xuan Liu,Shaoming Huang,Jiangting Wang,Lu Hua Li,Peter Hodgson,Menhan Zhou,Jian He,Ying Chen +9 more
Journal ArticleDOI
Thermal Parameter Monitoring of IGBT Module Using Case Temperature
TL;DR: In this paper, the authors proposed to monitor the thermal parameters of insulated gate bipolar transistor (IGBT) module using the case temperature, which is able to eliminate the influence of thermal interface material (TIM) degradation on the monitored results.
Journal ArticleDOI
Deformable high loading liquid metal nanoparticles composites for thermal energy management
Journal ArticleDOI
Thermal Network Parameter Estimation Using Cooling Curve of IGBT Module
TL;DR: In this paper, a thermal network parameter estimation method for insulated-gate bipolar transistor (IGBT) modules using the junction temperature cooling curve is proposed, which finds the RC parameters of a fourth-order Cauer network by establishing a relationship between RC parameters and time constants of junction temperature response curves.
References
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Journal ArticleDOI
Performance, limits and economic perspectives for passive cooling of High Concentrator Photovoltaics
TL;DR: In this article, the performance of the heat sinks has been related to the calculated energy yield of a standard triple-junction GaInP/GaAs/Ge HCPV cell in a system deployed at several suitable locations across the globe.
Journal ArticleDOI
Thermal Parameter Monitoring of IGBT Module Using Case Temperature
TL;DR: In this paper, the authors proposed to monitor the thermal parameters of insulated gate bipolar transistor (IGBT) module using the case temperature, which is able to eliminate the influence of thermal interface material (TIM) degradation on the monitored results.
Journal ArticleDOI
Thermal Network Parameter Estimation Using Cooling Curve of IGBT Module
TL;DR: In this paper, a thermal network parameter estimation method for insulated-gate bipolar transistor (IGBT) modules using the junction temperature cooling curve is proposed, which finds the RC parameters of a fourth-order Cauer network by establishing a relationship between RC parameters and time constants of junction temperature response curves.
Journal ArticleDOI
A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules
TL;DR: In this article, the authors proposed a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure.
Journal ArticleDOI
Experimental investigation of heat transfer and pressure drop of alumina–water nano-fluid in a porous miniature heat sink
TL;DR: In this article, the authors focused on heat transfer enhancement methods for heat removal from such devices, which has become of great concern in the last decade. But, they did not consider the thermal management of electronic devices.