Journal ArticleDOI
High-efficiency avalanche-diode oscillators and amplifiers in X-band
G. Gibbons,M.I. Grace +1 more
- Vol. 58, Iss: 3, pp 512-513
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TLDR
In this article, high-efficiency pulsed microwave amplification and oscillation was obtained at X-band using punch-through silicon p-n junction diodes mounted in a ridged waveguide.Abstract:
High-efficiency pulsed microwave amplification and oscillation have been obtained at X-band using punch-through silicon p-n junction diodes mounted in a ridged waveguide. Peak powers of 20 W at 30 percent efficiency were measured at 8.6 GHz.read more
Citations
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Journal ArticleDOI
Microwave avalanche diodes
S.M. Sze,R.M. Ryder +1 more
TL;DR: A brief review summarizes mechanisms of operation, power output, efficiency, noise, and some important features of design and fabrication of microwave avalanche diodes of various types.
Journal ArticleDOI
Basic Principles and Properties of Avalanche Transit-Time Devices
TL;DR: In this article, the basic principles and characteristics of the various modes of operation of avalanche transit-time devices are presented and experimental results are also presented in order to indicate the present state of development and the kind of performance which has been achieved in these devices.
Journal ArticleDOI
Computer Experiments on TRAPATT Diodes
TL;DR: A novel diode structure is proposed which eliminates the problem of self-starting TRAPATT oscillators and is capable of high-frequency CW TR APATT operation.
Journal ArticleDOI
Ion implanted X-band IMPATT/TRAPATT back-to-back diodes
T.T. Fong,R.S. Ying,D.H. Lee +2 more
TL;DR: In this paper, high-efficiency pulsed power at X-band frequencies has been generated using back-to-back IMPATT/TRAPATT silicon devices fabricated by ion implantation.
Journal ArticleDOI
Microwave avalanche devices
TL;DR: Avalanche diodes are finding an increasing number of applications as sources of microwave power in the frequency rane 1-100 GHz as discussed by the authors, and there are two basic modes of operation; the IMPATT mode in which the diode behaves as a negative conductance in a resonant circuit, and the TRAPATT mode where the device acts as a fast switch which periodically discharges the circuit elements.
References
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Journal ArticleDOI
Circuit for testing high-efficiency IMPATT diodes
TL;DR: A high-performance IMPATT diode test circuit has been developed which is very effective in reducing spurious oscillations in the germanium diode market.