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Journal ArticleDOI

High-speed non-linear circuit models for p-n junction diodes

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TLDR
In this paper, a diode model consisting of a parallel connection of higher-order dynamic elements is presented for non-linear high-speed and high-frequency operations, which can be used for simulating arbitrary pn junction diode circuits under all operating conditions.
Abstract
Circuit models for both long-base and short-base p-n junction diodes which are valid for non-linear high-speed and high-frequency operations are presented. the diode model consists of a parallel connection of higher-order dynamic elements and includes the conventional diffusion model as a special case. the new dynamic model can be used for simulating arbitrary p-n junction diode circuits under all operating conditions. In particular, it is capable of simulating realistically the diode's reverse transient behaviour and providing an increasingly accurate approximation to the diffusion equation as the order of the model gets higher. the model is also shown to be capable of reproducing the frequency-dependent small-signal characteristics of p-n junction diodes. The model is based mainly upon the device's physical operating principles. Perhaps the most significant implication of the model is the fact that it illustrates the important roles played by higher-order and dynamic elements in highspeed and high-frequency non-linear device modelling.

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Citations
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Journal ArticleDOI

Status and trends of power semiconductor device models for circuit simulation

TL;DR: The current status of research in the field of power semiconductor device models is reviewed in this article, where some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed and feasibility of parameter determination.
Book

Compact Hierarchical Bipolar Transistor Modeling with Hicum

TL;DR: This book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology.
Journal ArticleDOI

A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation

TL;DR: In this article, a new SPICE subcircuit model for power p-i-n diodes is proposed based on a moment-matching approximation of the ambipolar diffusion equation, which takes into account emitter recombination in the highly doped end regions, conductivity modulation in the base and the moving-boundaries effect during reverse-recovery.
Journal ArticleDOI

Analytical Modeling of Silicon Microring and Microdisk Modulators With Electrical and Optical Dynamics

TL;DR: In this article, an analytical time-domain model for microring and microdisk modulators is proposed, which considers both electrical and optical properties of the modulators, and general solutions to the transfer matrix representation are presented.
Journal ArticleDOI

An efficient nonquasi-static diode model for circuit simulation

TL;DR: A general nonquasi-static dynamic charge element is derived to simulate both transient behavior and high-frequency characteristics of a semiconductor diode to achieve significant improvement in accuracy over the traditional SPICE diode model in both time and frequency domain.
References
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Journal ArticleDOI

Memristor-The missing circuit element

TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Book

Introduction to approximation theory

TL;DR: In this paper, Tchebycheff polynomials and other linear families have been used for approximating least-squares approximations to systems of equations with one unknown solution.
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An introduction to the theory of random signals and noise

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Device electronics for integrated circuits

TL;DR: In this article, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
Journal ArticleDOI

Physics of Semiconductor Devices (2nd edn)

P J Dobson
- 01 Apr 1982 - 
TL;DR: Sze as mentioned in this paper has become a "standard" on the subject of microelectronic and optoelectronic devices and is often treated as the "Bible" on this subject.
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