Journal ArticleDOI
High-speed non-linear circuit models for p-n junction diodes
Leon O. Chua,Chwen-Cher Chang +1 more
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TLDR
In this paper, a diode model consisting of a parallel connection of higher-order dynamic elements is presented for non-linear high-speed and high-frequency operations, which can be used for simulating arbitrary pn junction diode circuits under all operating conditions.Abstract:
Circuit models for both long-base and short-base p-n junction diodes which are valid for non-linear high-speed and high-frequency operations are presented. the diode model consists of a parallel connection of higher-order dynamic elements and includes the conventional diffusion model as a special case. the new dynamic model can be used for simulating arbitrary p-n junction diode circuits under all operating conditions. In particular, it is capable of simulating realistically the diode's reverse transient behaviour and providing an increasingly accurate approximation to the diffusion equation as the order of the model gets higher. the model is also shown to be capable of reproducing the frequency-dependent small-signal characteristics of p-n junction diodes.
The model is based mainly upon the device's physical operating principles. Perhaps the most significant implication of the model is the fact that it illustrates the important roles played by higher-order and dynamic elements in highspeed and high-frequency non-linear device modelling.read more
Citations
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Journal ArticleDOI
Status and trends of power semiconductor device models for circuit simulation
R. Kraus,Hans Jurgen Mattausch +1 more
TL;DR: The current status of research in the field of power semiconductor device models is reviewed in this article, where some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed and feasibility of parameter determination.
Book
Compact Hierarchical Bipolar Transistor Modeling with Hicum
TL;DR: This book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology.
Journal ArticleDOI
A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation
TL;DR: In this article, a new SPICE subcircuit model for power p-i-n diodes is proposed based on a moment-matching approximation of the ambipolar diffusion equation, which takes into account emitter recombination in the highly doped end regions, conductivity modulation in the base and the moving-boundaries effect during reverse-recovery.
Journal ArticleDOI
Analytical Modeling of Silicon Microring and Microdisk Modulators With Electrical and Optical Dynamics
Raphael Dube-Demers,Jonathan St-Yves,Antoine Bois,Qiuhang Zhong,Michael Caverley,Yun Wang,Lukas Chrostowski,Sophie LaRochelle,David V. Plant,Wei Shi +9 more
TL;DR: In this article, an analytical time-domain model for microring and microdisk modulators is proposed, which considers both electrical and optical properties of the modulators, and general solutions to the transfer matrix representation are presented.
Journal ArticleDOI
An efficient nonquasi-static diode model for circuit simulation
A.T. Yang,Yu Liu,J.T. Yao +2 more
TL;DR: A general nonquasi-static dynamic charge element is derived to simulate both transient behavior and high-frequency characteristics of a semiconductor diode to achieve significant improvement in accuracy over the traditional SPICE diode model in both time and frequency domain.
References
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