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Device modeling via nonlinear circuit elements

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TLDR
Contrary to what is the case in linear circuit theory, it is shown that an infinite variety of basic algebraic and dynamic elements will be needed in the eventual formulation of a unified theory on device modeling.
Abstract
Two basic approaches to device modeling are presented. The physical approach consists of 4 basic steps: 1) device physics analysis and partitioning, 2) physical equation formulation, 3) equation simplification and solution, and 4) nonlinear network synthesis. The black-box approach consists also of 4 basic steps: 1) experimental observations, 2) mathematical modeling, 3) model validation, and 4) nonlinear network synthesis. Each approach is ilustrated with 2 examples: Gunn Diode and SCR for the physical approach and Hysteretic Inductor and Memristive Device for the black-box approach. While the techniques for carrying out the first 3 steps in each approach presently involve more art than science, a unified theory for carrying out the last step (nonlinear network synthesis) is beginning to emerge. In particular, the universe of all lumped nonlinear circuit elements can now be classified into algebraic and dynamic elements via a completely logical axiomatic approach. Contrary to what is the case in linear circuit theory, it is shown that an infinite variety of basic algebraic and dynamic elements will be needed in the eventual formulation of a unified theory on device modeling. Consequently, these elements are given a complete and in-depth treatment in this paper. This material can also be regarded as a self-contained survey of the state-of-the-art on nonlinear network synthesis.

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Citations
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Journal ArticleDOI

Resistance Switching Memories Are Memristors

TL;DR: The memristor is a 2-terminal nonvolatile memory device that exhibits a pinched hysteresis loop confined to the first and third quadrants of the v-i plane whose contour shape in general changes with both the amplitude and frequency of any periodic sine-wave-like input voltage source, or current source as mentioned in this paper.

Resistance Switching Memories are Memristors.

TL;DR: The goal of this tutorial is to introduce some fundamental circuit-theoretic concepts and properties of the memristor that are relevant to the analysis and design of non-volatile nano memories where binary bits are stored as resistances manifested by the Memristor’s continuum of equilibrium states.
Journal ArticleDOI

Neural networks for nonlinear programming

TL;DR: In this paper, the dynamics of the modified canonical nonlinear programming circuit are studied and how to guarantee the stability of the network's solution, by considering the total cocontent function.
Journal ArticleDOI

New conditions for global stability of neural networks with application to linear and quadratic programming problems

TL;DR: In this paper, the authors present new conditions ensuring existence, uniqueness, and global asymptotic stability of the equilibrium point for a large class of neural networks, which are applicable to both symmetric and nonsymmetric interconnection matrices and allow for the consideration of all continuous non-reasing neuron activation functions.
Journal ArticleDOI

The elusive memristor: properties of basic electrical circuits

TL;DR: In this paper, the properties of a single memristor, as well as ideal memristors in series and parallel, are presented, and simple models are presented which show that these unusual properties are closely related to the internal dynamics of the Memristor's internal dynamics.
References
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TL;DR: This article concludes a series of papers concerned with the flow of electric current through the surface membrane of a giant nerve fibre by putting them into mathematical form and showing that they will account for conduction and excitation in quantitative terms.
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Memristor-The missing circuit element

TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
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Jan Tauc
TL;DR: In this article, the nature of the amorphous state and the electronic properties of the Amorphous Semi-conductors have been investigated in the context of liquid semiconductors.
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Memristive devices and systems

TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.
Journal ArticleDOI

Section-wise piecewise-linear functions: Canonical representation, properties, and applications

TL;DR: In this article, a new closed form analytical formula for representing n-dimensional surfaces and scalar functions of n variables which are piecewise-linear over each cross section obtained by freezing any combination of n - 1 of the n coordinates is presented.