Journal ArticleDOI
Hot-carrier microwave conductivity of elemental semiconductors
TLDR
The hot-carrier microwave conductivity characteristics of the elemental semiconductors are reviewed in this paper, where the microwave incremental and high-field microwave conductivities are explained from simple physical considerations.Abstract:
The hot-carrier microwave conductivity characteristics of the elemental semiconductors are reviewed. Significant features of the microwave incremental conductivity and also of the high-field microwave conductivity are critically analysed. These features are explained from simple physical considerations. Comparison is then made between the detailed theories and the experimental results. It is shown that most of the features of the microwave conductivity characteristics agree with those expected from theory. Some of the finer details of the characteristics which require further investigations are also indicated.read more
Citations
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Journal ArticleDOI
Bulk effect germanium microwave modulation
TL;DR: In this paper, a bulk effect hot carrier microwave modulator for Q-band is described in which the required applied voltages are reduced by an order of magnitude from previous modulators.
References
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Journal ArticleDOI
A proposed high-frequency, negative-resistance diode
TL;DR: In this paper, a semiconductor diode designed to operate as an oscillator when mounted in a suitable microwave cavity is described and analyzed, and it appears possible to obtain over 20 watts of ac power in continuous operation at 5 kmc.
Journal ArticleDOI
Hot electrons in germanium and Ohm's law
TL;DR: In this article, the data of E. J. Ryder on the mobility of electrons in electric fields up to 40,000 volts per cm are analyzed and it is estimated that electron “temperatures as high as 4000°K have been produced in specimens having temperatures of atomic vibration of 300° K.
Journal ArticleDOI
Mobility of Holes and Electrons in High Electric Fields
TL;DR: In this paper, the field dependence of mobility has been determined for electrons and holes in both germanium and silicon, and the observed critical field at 298\ifmmode^\circ\else\textdegree\fi{}K beyond which $\ensuremath{\mu}$ varies as ${E}^{-}\frac{1}{2}}$.
Journal ArticleDOI
Dielectric Breakdown in Solids
Herbert Fröhlich,B V Paranjape +1 more
TL;DR: In this paper, it was shown that even at fairly low electronic densities (of the order 1014 cm-3) an electron exchanges energy with other electrons quicker than with lattice vibrations, mainly because collisions with the latter are nearly elastic.
Journal ArticleDOI
The Influence of Interelectronic Collisions on Conduction and Breakdown in Covalent Semi-Conductors
TL;DR: The energy and momentum distributions of electrons in high electric fields are largely determined by interelectronic collisions if the electron densities are sufficiently high; but at lower densities only the energy distribution is affected as discussed by the authors.