Proceedings ArticleDOI
Implementing power diode models in SPICE and Saber
King Jet Tseng,C.F. Foo,Patrick R. Palmer +2 more
- Vol. 1, pp 59-63
TLDR
Practical implementations of a proposed model in widely-used versions of SPICE by hard-coding and by using user-defined controlled sources are presented and an implementation in Saber using the analog hardware description language MAST is included.Abstract:
Accurate simulation of power electronic circuits involving power diodes requires mathematically-based power diode models to describe the forward recovery and reverse recovery characteristics realistically. Proper implementations of these models have important bearings on their eventual acceptance in the industry. Practical implementations of a proposed model in widely-used versions of SPICE by hard-coding and by using user-defined controlled sources are presented. The discussion also includes an implementation in Saber using the analog hardware description language MAST. >read more
Citations
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Journal ArticleDOI
Status and trends of power semiconductor device models for circuit simulation
R. Kraus,Hans Jurgen Mattausch +1 more
TL;DR: The current status of research in the field of power semiconductor device models is reviewed in this article, where some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed and feasibility of parameter determination.
Journal ArticleDOI
A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation
TL;DR: In this article, a new SPICE subcircuit model for power p-i-n diodes is proposed based on a moment-matching approximation of the ambipolar diffusion equation, which takes into account emitter recombination in the highly doped end regions, conductivity modulation in the base and the moving-boundaries effect during reverse-recovery.
Journal ArticleDOI
Using power diode models for circuit simulations-a comprehensive review
Cher Ming Tan,King Jet Tseng +1 more
TL;DR: The models have been categorized systematically according to their modeling concepts with objective comparison of their status pertaining to the various modeling issues to provide the power electronics community with a comprehensive review and summary of recent power diode models.
Proceedings ArticleDOI
PT-IGBT PSpice model with new parameter extraction for life-time and epy dependent behaviour simulation
TL;DR: In this paper, an improved IGBT PSpice model is presented aiming at overcoming the incompleteness of other models, which can be attributed to the incorrect modelling of the particular epitaxial structure of the intrinsic PNP of the IGBT.
A simple diode model with reverse recovery
P.O. Lauritzen,C.L. Ma +1 more
TL;DR: In this paper, the basic diode charge control model used in SPICE is extended to include reverse recovery, and the model is demonstrated on the Saber simulator for simple inductive and resistive load circuits.
References
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Journal ArticleDOI
A simple diode model with reverse recovery
P.O. Lauritzen,C.L. Ma +1 more
TL;DR: In this paper, the basic diode charge control model used in SPICE is extended to include reverse recovery, and the model is derived from the semiconductor charge transport equations using the lumped charged concept of Linvill, and demonstrated on the Saber simulator for simple inductive and resistive load circuits.
Journal ArticleDOI
Reverse recovery processes in silicon power rectifiers
TL;DR: In this paper, the authors present an account of a number of investigations that have been recently carried out in the Semiconductor Laboratory Pretzfeld, Siemens AG, in order to understand the switching processes in power rectifiers from the forward into the reverse state.
Journal ArticleDOI
Diode forward and reverse recovery model for power electronic SPICE simulations
Yung C. Liang,V.J. Gosbell +1 more
TL;DR: In this paper, a pn-diode micro-model representing forward and reverse recovery phenomena for power electronic simulation, especially simulations using SPICE2, was proposed to compensate the incompleteness of the diode model in current circuit simulation packages.
Proceedings ArticleDOI
Power semiconductor device models for use in circuit simulators
TL;DR: The publicly available power semiconductor device models are surveyed, their performances are compared, and recommendations for specific simulation applications are presented in this article, where it is shown that the accurate models available for the power BJT and MOSFET often cannot run on the same simulators, power transistor models are more completely developed than thyristor models, and no suitable power rectifier model exists that can produce accurate switching waveforms.