Journal ArticleDOI
Influence of ambient air exposure on surface chemistry and electronic properties of thin copper phthalocyanine sensing layers
TLDR
In this paper, the influence of 12-hour exposure to the ambient air on the chemical and electronic properties of thin 16-nm copper phthalocyanine (CuPc) sensing layers deposited on n- and p-type silicon Si(111) substrates covered with the native oxide was investigated.About:
This article is published in Thin Solid Films.The article was published on 2011-01-31. It has received 22 citations till now. The article focuses on the topics: Inverse photoemission spectroscopy & Phthalocyanine.read more
Citations
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Journal ArticleDOI
Modification of the 3d-Electronic Configuration of Manganese Phthalocyanine at the Interface to Gold
TL;DR: In this paper, the electronic structure of ultrathin films of manganese phthalocyanine (MnPc) on polycrystalline and single crystalline Au has been investigated using photoexcited spectroscopies in the lab and at synchrotron sources.
Journal ArticleDOI
Indium(III) phthalocyanine eka-conjugated polymer as high-performance optical limiter upon nanosecond laser irradiation
TL;DR: In this paper, a chloroindium(III) phthalocyanine network polymer (4) was prepared and characterized by energy dispersive X-ray spectrometry, proton nuclear magnetic resonance, Fourier transform infrared sp...
Journal ArticleDOI
Photoemission study of the Si(111)-native SiO2/copper phthalocyanine (CuPc) ultra-thin film interface
TL;DR: In this article, the authors examined the interface formation between deposited copper phthalocyanine (CuPc) thin films and covered with native oxide n- and p-type silicon Si(1.1) substrates.
Journal ArticleDOI
Impact of air exposure and annealing on the chemical and electronic properties of the surface of SnO2 nanolayers deposited by rheotaxial growth and vacuum oxidation.
Monika Kwoka,Maciej Krzywiecki +1 more
TL;DR: Results showed that the pristine RGVO SnO2 nanolayers are of high purity with a ratio [O]/[Sn] = 1.62 and almost no carbon contamination.
Journal ArticleDOI
Unoccupied Electronic States at the Interface of Oligo(phenylene-vinylene) Films with Oxidized Silicon
TL;DR: In this article, the surface work function and the density of the unoccupied electron states (DOUS) located 5−20 eV above the Fermi level were studied during the film deposition using the very low energy electron diffraction (VLEED) method and the total current spectroscopy (TCS) measurement scheme.
References
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Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Book
Fundamentals of Semiconductors: Physics and Materials Properties
Peter Y. Yu,Manuel Cardona +1 more
TL;DR: In this paper, the effect of quantum confinement on Electrons and Phonons in Semiconductors is discussed, as well as the effects of quantum confinement on Electron-Phonon Interactions.
Book
Low Energy Electrons and Surface Chemistry
Gerhard Ertl,J. Küppers +1 more
TL;DR: In this article, the basic concepts of Auger Electron Spectroscopy and X-Ray Photo Electromechanical Imaging (XPS) have been discussed, as well as their application in X-ray photoelectron spectroscopy.
Journal ArticleDOI
Charge-separation energy in films of π-conjugated organic molecules
TL;DR: In this article, the authors used inverse photoelectron spectroscopy (IPES) and ultraviolet photo-electron (UPS) to investigate unoccupied and occupied electronic states of five organic semiconductor materials: CuPc (copper phthalocyanine), PTCDA (3,4,9,10-perylenetetetracarboxylic dianhydride), α-6T (α-sexithiophene), αNPD (N,N, naphthyl)-l,l′ biphenyl
Journal ArticleDOI
Metallophthalocyanines. gas sensors, resistors and field effect transistors
TL;DR: In this paper, the same type of studies have been carried out using metallophthalocyanine as the electroactive (semiconductive) part of a field effect transistor (FET).